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BSL314PE

Description
OptiMOS鈩?P 3 Small-Signal-Transistor
CategoryDiscrete semiconductor    The transistor   
File Size347KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BSL314PE Overview

OptiMOS鈩?P 3 Small-Signal-Transistor

BSL314PE Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum drain current (Abs) (ID)1.5 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)0.5 W
surface mountYES

BSL314PE Related Products

BSL314PE BSL314PEH6327 BSL314PEL6327HTSA1
Description OptiMOS鈩?P 3 Small-Signal-Transistor Small Signal Field-Effect Transistor, 1.5A I(D), 30V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSOP-6 MOSFET 2P-CH 30V 1.5A 6TSOP
Is it Rohs certified? conform to conform to conform to
Maker Infineon Infineon Infineon
Reach Compliance Code compliant compliant unknown
ECCN code EAR99 EAR99 EAR99
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Polarity/channel type P-CHANNEL P-CHANNEL P-CHANNEL
surface mount YES YES YES
Is it lead-free? Lead free - Lead free
Maximum operating temperature 150 °C - 150 °C
package instruction - SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6
Configuration - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage - 30 V 30 V
Maximum drain current (ID) - 1.5 A 1.5 A
Maximum drain-source on-resistance - 0.14 Ω 0.14 Ω
Maximum feedback capacitance (Crss) - 11 pF 11 pF
JESD-30 code - R-PDSO-G6 R-PDSO-G6
Number of components - 2 2
Number of terminals - 6 6
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED
Terminal form - GULL WING GULL WING
Terminal location - DUAL DUAL
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED
Transistor component materials - SILICON SILICON
Base Number Matches - 1 1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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