BBY56-02W datasheet, PDF - EEWORLD Datasheet

BBY56-02W: Description40 pF, 10 V, SILICON, VARIABLE CAPACITANCE DIODE; CategoryDiscrete semiconductor diode; File Size70KB，7 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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BBY56-02W Overview

40 pF, 10 V, SILICON, VARIABLE CAPACITANCE DIODE

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Infineon
package instruction	R-PDSO-F2
Contacts	2
Reach Compliance Code	compli
ECCN code	EAR99
Is Samacsys	N
Other features	LOW INDUCTANCE
Configuration	SINGLE
Diode Capacitance Tolerance	7.5%
Minimum diode capacitance ratio	2.15
Nominal diode capacitance	40 pF
Diode component materials	SILICON
Diode type	VARIABLE CAPACITANCE DIODE
JESD-30 code	R-PDSO-F2
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	10 V
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

	BBY56-02W	BBY56	BBY56-03W	BBY56_07
Description	40 pF, 10 V, SILICON, VARIABLE CAPACITANCE DIODE	40 pF, 10 V, SILICON, VARIABLE CAPACITANCE DIODE	40 pF, 10 V, SILICON, VARIABLE CAPACITANCE DIODE	40 pF, 10 V, SILICON, VARIABLE CAPACITANCE DIODE

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