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FTF512K8-90DEM5

Description
Flash, 512KX8, 90ns, CDSO32, CERAMIC, SOJ-32
Categorystorage    storage   
File Size368KB,11 Pages
ManufacturerForce Technologies Ltd.
Download Datasheet Parametric View All

FTF512K8-90DEM5 Overview

Flash, 512KX8, 90ns, CDSO32, CERAMIC, SOJ-32

FTF512K8-90DEM5 Parametric

Parameter NameAttribute value
MakerForce Technologies Ltd.
Parts packaging codeSOJ
package instructionSOJ, SOJ32,.44
Contacts32
Reach Compliance Codecompliant
ECCN code3A001.A.2.C
Maximum access time90 ns
command user interfaceNO
Data pollingYES
JESD-30 codeR-CDSO-J32
length21.1 mm
memory density4194304 bit
Memory IC TypeFLASH
memory width8
Number of functions1
Number of departments/size8
Number of terminals32
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize512KX8
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeSOJ
Encapsulate equivalent codeSOJ32,.44
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialPARALLEL
power supply5 V
Programming voltage5 V
Certification statusNot Qualified
Maximum seat height3.96 mm
Department size64K
Maximum standby current0.0016 A
Maximum slew rate0.06 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationDUAL
switch bitNO
typeNOR TYPE
width11.3 mm
FTF512K8-XXX5
512Kx8 MONOLITHIC FLASH
FEATURES
Access Times of 60, 70, 90, 120, 150ns
Packaging
• 32 pin, Hermetic Ceramic, 0.600" DIP
• 32 lead, Hermetic Ceramic, 0.400" SOJ
• 32 pin, Rectangular Ceramic Leadless Chip
Carrier
• 32 lead Flatpack
1,000,000 Erase/Program Cycles Minimum
Sector Erase Architecture
• 8 equal size sectors of 64K bytes each
• Any combination of sectors can be concurrently
erased. Also supports full chip erase
PIN CONFIGURATION
32 DIP
32 CSOJ
32 Flatpack
Organized as 512Kx8
Commercial, Industrial and Military Temperature
Ranges
5 Volt Programming. 5V ± 10% Supply.
Low Power CMOS
Embedded Erase and Program Algorithms
TTL Compatible Inputs and CMOS Outputs
Page Program Operation and Internal Program
Control Time.
32 CLCC
T
OP
V
IEW
A12
A18
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
V
SS
T
OP
V
IEW
A15
A16
A18
V
CC
WE
A17
A14
A13
A8
A9
A11
OE
A10
CS
I/O7
I/O6
I/O5
I/O4
I/O3
I/O1
I/O2
I/O3
I/O4
I/O5
P
IN
D
ESCRIPTION
A
0
-
18
I/O
0-7
CS
OE
WE
V
CC
V
SS
Address Inputs
Data Input/Output
Chip Select
Output Enable
Write Enable
+5.0V Power
Ground
1
I/O6
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
4 3 2 1 32 31 30
A7
A6
A5
A4
A3
A2
A1
A0
I/O
0
5
29
6
28
7
27
8
26
9
25
10
24
11
23
12
22
13
21
14 15 16 17 18 19 20
A14
A13
A8
A9
A11
OE
A10
CS
I/O7
A17
V
CC
WE

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