SGA6289ZDC
to 4500MHz,
Cascadable
SiGe HBT
MMIC Ampli-
fier
SGA6289Z
Package: SOT-89
DC to 4500MHz, CASCADABLE SiGe HBT
MMIC AMPLIFIER
Product Description
The SGA6289Z is a high performance SiGe HBT MMIC Amplifier. A Darling-
ton configuration featuring one-micron emitters provides high F
T
and
excellent thermal performance. The heterojunction increases breakdown
voltage and minimizes leakage current between junctions. Cancellation of
emitter junction non-linearities results in higher suppression of intermodu-
lation products. Only two DC-blocking capacitors, a bias resistor, and an
optional RF choke are required for operation.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
15
GAIN
IRL
10
ORL
5
20
Features
Gain & Return Loss vs. Frequency
D
-20
-10
Return Loss (dB)
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Gain (dB)
Si BiCMOS
EW
1
0
0
2
N
3
4
Frequency (GHz)
Parameter
Small Signal Gain
FO
R
Min.
12.3
Specification
Typ.
13.9
12.6
12.2
18.1
17.8
34.4
32.0
4500
ES
0
-30
-40
5
Max.
15.1
Unit
dB
dB
dB
dBm
dBm
dBm
dBm
MHz
850MHz
1950MHz
2400MHz
850MHz
1950MHz
850MHz
1950MHz
>10dB
Output Power at 1dB Compression
Output Third Intercept Point
Bandwidth Determined by Return
Loss
Input Return Loss
18.5
dB
1950MHz
Output Return Loss
13.1
dB
1950MHz
Noise Figure
4.0
dB
1950MHz
Device Operating Voltage
3.6
4.0
4.4
V
Device Operating Current
67
75
83
mA
Thermal Resistance
97
°C/W
(Junction - Lead)
Test Conditions: V
S
=8V, I
D
=75mA Typ., OIP
3
Tone Spacing=1MHz, P
OUT
per tone=0dBm, R
BIAS
=51, T
L
=25°C, Z
S
=Z
L
=50
DS20160224
N
O
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
T
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
IG
N
Broadband Operation: DC to
4500MHz
Cascadable 50
Operates from Single Supply
Low Thermal Resistance
Package
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
Applications
Condition
1 of 6
SGA6289Z
Absolute Maximum Ratings
Parameter
Max Device Current (I
D
)
Max Device Voltage (V
D
)
Max RF Input Power
Max Junction Temp (T
J
)
Operating Temp Range (T
L
)
Max Storage Temp
Moisture Sensitivity Level
Rating
150
6
+18
+150
-40 to +85
+150
MSL 2
Unit
mA
V
dBm
°C
°C
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Typical Performance at Key Operating Frequencies
OIP
3
vs. Frequency
V
D
= 4.0 V, I
D
= 75 mA
40
36
OIP
3
(dBm)
32
28
24
20
N
EW
Small Signal Gain
dB
13.5
14.0
13.9
12.6
Output Third Order Intercept Point
dBm
36.0
35.0
34.4
32.0
Output Power at 1dB Compression
dBm
18.7
18.6
18.1
17.8
Input Return Loss
dB
20.8
19.5
19.3
18.5
Output Return Loss
dB
32.8
25.6
20.6
13.1
Reverse Isolation
dB
17.4
18.6
18.9
19.2
Noise Figure
dB
3.9
3.8
3.7
4.0
Test Conditions: V
S
=8V, I
D
=75mA Typ., OIP
3
Tone Spacing=1MHz, P
OUT
per tone=0dBm, R
BIAS
=51, T
L
=25°C, Z
S
=Z
L
=50
ES
0.5
1.0
Parameter
Unit
100
MHz
500
MHz
IG
N
850
MHz
1950
MHz
P
1dB
vs. Frequency
V
D
= 4.0 V, I
D
= 75 mA
1.5
2.0
2.5
Frequency (GHz)
5
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
I
D
V
D
<(T
J
-T
L
)/R
TH
, j-l
2400
MHz
12.2
31.2
17.1
17.9
12.2
19.1
4.6
3500
MHz
10.6
28.2
15.6
14.7
12.6
18.1
5.1
R
FO
T
L
+25°C
-40°C
P
1dB
(dBm)
+85°C
D
20
18
16
14
+25°C
T
12
10
3.0
3.5
0.0
T
L
-40°C
+85°C
N
O
0.0
0.5
1.0
1.5
2.0
2.5
Frequency (GHz)
3.0
3.5
Noise Figure vs. Frequency
V
D
= 4.0 V, I
D
= 75 mA
7
6
5
4
3
2
0
1
2
3
Frequency (GHz)
4
Noise Figure (dB)
T
L
=+25ºC
2 of 6
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS20160224
SGA6289Z
|
S
|
vs. Frequency
21
|
S
|
vs. Frequency
11
20
16
|S
21
| (dB)
12
8
4
0
1
V
D
= 4.0 V, I
D
= 75 mA
+25°C
-40°C
+85°C
0
-10
|S
11
| (dB)
-20
-30
V
D
= 4.0 V, I
D
= 75 mA
T
L
T
L
-40
2
3
Frequency (GHz)
4
5
0
1
IG
N
2
3
Frequency (GHz)
22
+25°C
-40°C
+85°C
4
5
12
-10
-15
|S
12
| (dB)
-20
-25
V
D
= 4.0 V, I
D
= 75 mA
0
-10
N
T
L
-30
0
1
2
3
Frequency (GHz)
+25°C
-40°C
+85°C
EW
-20
-30
-40
0
1
2
3
Frequency (GHz)
4
|S
22
| (dB)
D
ES
|
S
|
vs. Frequency
|
S
|
vs. Frequency
V
D
= 4.0 V, I
D
= 75 mA
T
L
+25°C
-40°C
+85°C
V
D
vs. I
D
over Temperature for fixed
V
S
= 8V , R
BIAS
= 51 Ohms *
90
85
80
I
D
(mA)
75
70
65
60
3.6
3.8
4.0
4.2
4.4
FO
R
4
5
5
V
D
vs. Temperature for Constant I
D
= 75 mA
4.6
4.4
V
D
(Volts)
4.2
4.0
3.8
3.6
-40
-15
N
O
+85°C
T
+25°C
-40°C
V
D
(Volts)
10
35
Temperature (°C)
60
85
* Note: In the applications circuit on page 4, R
BIAS
compensates for voltage and current variation over temperature.
DS20160224
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
3 of 6
SGA6289Z
Pin
1
2, 4
3
Function
RF IN
GND
RF OUT/BIAS
Description
RF input pin. This pin requires teh use of an external DC-blocking capacitor chosen for the frequency of operation.
Connection to ground. For optimum RF performance use via holes as close to ground leads as possible to reduce lead
inductance.
RF output and bias pin. DC voltage is present on this pin, therefore a DC-blocking ccapacitor is necessary for proper oper-
ation.
Suggested Pad Layout
Preliminary
Package Drawing
4 of 6
N
O
T
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
FO
Dimensions in inches (millimeters)
Refer to drawing posted at www.rfmd.com for tolerances.
R
N
EW
D
ES
DS20160224
IG
N
SGA6289Z
Application Schematic
pp
Frequency (Mhz)
V
S
R
BIAS
1 uF
1000
pF
Reference
Designator
500
850
1950
2400
3500
C
B
220 pF
100 pF
68 nH
100 pF
68 pF
33 nH
68 pF
22 pF
22 nH
56 pF
22 pF
18 nH
39 pF
15 pF
15 nH
C
D
L
C
C
D
L
C
C
B
2
C
B
R
BIAS
IG
N
27
51
RF in
1
SGA6289Z
3
4
Recommended Bias Resistor Values for I
D
=75mA
R
BIAS
=( V
S
-V
D
) / I
D
RF out
Supply Voltage(V
S
)
6V
8V
10 V
82
12 V
110
Note: R
BIAS
provides DC bias stability over temperature.
Mounting Instructions:
1. Solder the copper pad on the backside of the device package to the ground plane.
2. Use a large ground pad area with many plated through-holes as shown.
3. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31mil thick FR-4 board with 1
ounce copper on both sides.
DS20160224
N
O
T
FO
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
R
N
EW
D
ES
Evaluation Board Layout
5 of 6
京公网安备 11010802033920号
EEWORLD
