The SGA6289Z is a high performance SiGe HBT MMIC Amplifier. A Darling-
ton configuration featuring one-micron emitters provides high F
T
and
excellent thermal performance. The heterojunction increases breakdown
voltage and minimizes leakage current between junctions. Cancellation of
emitter junction non-linearities results in higher suppression of intermodu-
lation products. Only two DC-blocking capacitors, a bias resistor, and an
optional RF choke are required for operation.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
15
GAIN
IRL
10
ORL
5
20
Features
Gain & Return Loss vs. Frequency
D
-20
-10
Return Loss (dB)
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Gain (dB)
Si BiCMOS
EW
1
0
0
2
N
3
4
Frequency (GHz)
Parameter
Small Signal Gain
FO
R
Min.
12.3
Specification
Typ.
13.9
12.6
12.2
18.1
17.8
34.4
32.0
4500
ES
0
-30
-40
5
Max.
15.1
Unit
dB
dB
dB
dBm
dBm
dBm
dBm
MHz
850MHz
1950MHz
2400MHz
850MHz
1950MHz
850MHz
1950MHz
>10dB
Output Power at 1dB Compression
Output Third Intercept Point
Bandwidth Determined by Return
Loss
Input Return Loss
18.5
dB
1950MHz
Output Return Loss
13.1
dB
1950MHz
Noise Figure
4.0
dB
1950MHz
Device Operating Voltage
3.6
4.0
4.4
V
Device Operating Current
67
75
83
mA
Thermal Resistance
97
°C/W
(Junction - Lead)
Test Conditions: V
S
=8V, I
D
=75mA Typ., OIP
3
Tone Spacing=1MHz, P
OUT
per tone=0dBm, R
BIAS
=51, T
L
=25°C, Z
S
=Z
L
=50
DS20160224
N
O
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
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