SDA312ETXV datasheet, PDF - EEWORLD Datasheet

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SDA312ETXV: DescriptionBridge Rectifier Diode,; CategoryDiscrete semiconductor diode; File Size234KB，2 Pages; ManufacturerSSDI; Websitehttp://www.ssdi-power.com/

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SDA312ETXV Overview

Bridge Rectifier Diode,

SDA312ETXV Parametric

Parameter Name	Attribute value
Maker	SSDI
package instruction	R-MUFM-X5
Reach Compliance Code	compliant
ECCN code	EAR99
Minimum breakdown voltage	600 V
Shell connection	ISOLATED
Configuration	BRIDGE, 6 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
JESD-30 code	R-MUFM-X5
Maximum non-repetitive peak forward current	90 A
Number of components	6
Phase	3
Number of terminals	5
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	15 A
Package body material	METAL
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Guideline	MIL-19500
Maximum repetitive peak reverse voltage	600 V
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER

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SDA312A thru SDA312G

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

Part Number / Ordering Information

15 AMP

50-1000 VOLTS

STANDARD RECOVERY

3 PHASE BRIDGE ASSEMBLY

Features:



Standard Recovery: 5 µsec Maximum

50 to 1000 V Blocking Voltage

Average Output Current 15 Amps

Low Reverse Leakage Current

Glass Passivated Void Free Hermetically Sealed

Discrete Rectifiers



Aluminum Case, Electrically Insulated, for Maximum

Thermal Conductivity



TX, TXV, and S Level Screening Available



Available in Fast, Ultra Fast, and Hyper Fast

Recovery

SDA312 __ __ __

│

└

│

└

Screening

= Not Screened

TX = TX Level

TXV = TXV Level

S = S Level

Voltage

A = 50 V

B = 100 V

C = 200 V

D = 400 V

E = 600 V

F = 800 V

G = 1000 V

Polarity

= Standard

R = Reverse

Maximum Ratings

SDA312A

SDA312B

SDA312C

SDA312D

SDA312E

SDA312F

SDA312G

Symbol

Value

100

200

400

600

800

1000

Units

Peak Repetitive Reverse and DC Blocking Voltage

RRM

RWM

Volts

Average Rectified Forward Current

Resistive Load, 60 Hz Sine Wave, T

≤

55°C

Amps

Peak Surge Current

8.3 ms Pulse, Half Sine Wave, T

= 25°C, Per Leg

FSM

& T

stg

θJC

SDA312 Package:

-55 to +150

3.5

Amps

°C

°C/W

Operating & Storage Temperature

Maximum Thermal Resistance

Junction to Case (per Assembly)

1/ For ordering information, price, operating curves, and availability - Contact factory.

2/ Screening based on MIL-PRF-19500. Screening flows available on request.

3/ Unless otherwise specified, all electrical characteristics at 25°C.

4/ Unless otherwise specified, all electrical characteristics shall be per leg.

NOTE:

All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: RA0001B

DOC

SDA312ETXV Related Products

	SDA312ETXV	SDA312ETX	SDA312ES	SDA312FTX	SDA312FTXV	SDA312FS	SDA312GS	SDA312GTX	SDA312GTXV	SDA312CTXV
Description	Bridge Rectifier Diode,	Bridge Rectifier Diode,	Bridge Rectifier Diode,	Bridge Rectifier Diode,	Bridge Rectifier Diode,	Bridge Rectifier Diode,	Bridge Rectifier Diode,	Bridge Rectifier Diode,	Bridge Rectifier Diode,	Bridge Rectifier Diode,
package instruction	R-MUFM-X5	R-MUFM-X5	R-MUFM-X5	R-MUFM-X5	R-MUFM-X5	R-MUFM-X5	R-MUFM-X5	R-MUFM-X5	R-MUFM-X5	R-MUFM-X5
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Minimum breakdown voltage	600 V	600 V	600 V	800 V	800 V	800 V	1000 V	1000 V	1000 V	200 V
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	BRIDGE, 6 ELEMENTS	BRIDGE, 6 ELEMENTS	BRIDGE, 6 ELEMENTS	BRIDGE, 6 ELEMENTS	BRIDGE, 6 ELEMENTS	BRIDGE, 6 ELEMENTS	BRIDGE, 6 ELEMENTS	BRIDGE, 6 ELEMENTS	BRIDGE, 6 ELEMENTS	BRIDGE, 6 ELEMENTS
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
JESD-30 code	R-MUFM-X5	R-MUFM-X5	R-MUFM-X5	R-MUFM-X5	R-MUFM-X5	R-MUFM-X5	R-MUFM-X5	R-MUFM-X5	R-MUFM-X5	R-MUFM-X5
Maximum non-repetitive peak forward current	90 A	90 A	90 A	90 A	90 A	90 A	90 A	90 A	90 A	90 A
Number of components	6	6	6	6	6	6	6	6	6	6
Phase	3	3	3	3	3	3	3	3	3	3
Number of terminals	5	5	5	5	5	5	5	5	5	5
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
Maximum output current	15 A	15 A	15 A	15 A	15 A	15 A	15 A	15 A	15 A	15 A
Package body material	METAL	METAL	METAL	METAL	METAL	METAL	METAL	METAL	METAL	METAL
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Guideline	MIL-19500	MIL-19500	MIL-19500	MIL-19500	MIL-19500	MIL-19500	MIL-19500	MIL-19500	MIL-19500	MIL-19500
Maximum repetitive peak reverse voltage	600 V	600 V	600 V	800 V	800 V	800 V	1000 V	1000 V	1000 V	200 V
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO	NO
Terminal form	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Terminal location	UPPER	UPPER	UPPER	UPPER	UPPER	UPPER	UPPER	UPPER	UPPER	UPPER
Maker	SSDI	SSDI	SSDI	SSDI	SSDI	SSDI	SSDI	SSDI	SSDI	-

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