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ST203C10CFH3

Description
Silicon Controlled Rectifier, 700A I(T)RMS, 370000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200AB, METAL CASE WITH CERAMIC INSULATOR, APUK-3
CategoryAnalog mixed-signal IC    Trigger device   
File Size174KB,9 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

ST203C10CFH3 Overview

Silicon Controlled Rectifier, 700A I(T)RMS, 370000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200AB, METAL CASE WITH CERAMIC INSULATOR, APUK-3

ST203C10CFH3 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
Parts packaging codeBUTTON
package instructionDISK BUTTON, O-CEDB-N2
Contacts3
Manufacturer packaging codeA-PUK
Reach Compliance Codecompliant
Other featuresHIGH SPEED
Shell connectionISOLATED
Nominal circuit commutation break time30 µs
ConfigurationSINGLE
Critical rise rate of minimum off-state voltage500 V/us
Maximum DC gate trigger current200 mA
Maximum DC gate trigger voltage3 V
Maximum holding current600 mA
JEDEC-95 codeTO-200AB
JESD-30 codeO-CEDB-N2
JESD-609 codee0
Maximum leakage current40 mA
On-state non-repetitive peak current5510 A
Number of components1
Number of terminals2
Maximum on-state current370000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum rms on-state current700 A
Maximum repetitive peak off-state leakage current40000 µA
Off-state repetitive peak voltage1000 V
Repeated peak reverse voltage1000 V
surface mountYES
Terminal surfaceTIN LEAD
Terminal formNO LEAD
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeSCR

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