3 A, SILICON, RECTIFIER DIODE, DO-201AD
Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
Maker | EIC [EIC discrete Semiconductors] |
package instruction | O-PALF-W2 |
Reach Compliance Code | compli |
Other features | HIGH RELIABILITY |
application | SUPER FAST RECOVERY |
Shell connection | ISOLATED |
Configuration | SINGLE |
Diode component materials | SILICON |
Diode type | RECTIFIER DIODE |
Maximum forward voltage (VF) | 4 V |
JEDEC-95 code | DO-201AD |
JESD-30 code | O-PALF-W2 |
Maximum non-repetitive peak forward current | 125 A |
Number of components | 1 |
Phase | 1 |
Number of terminals | 2 |
Maximum operating temperature | 150 °C |
Minimum operating temperature | -65 °C |
Maximum output current | 3 A |
Package body material | PLASTIC/EPOXY |
Package shape | ROUND |
Package form | LONG FORM |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Maximum repetitive peak reverse voltage | 800 V |
Maximum reverse current | 10 µA |
Maximum reverse recovery time | 0.035 µs |
surface mount | NO |
Terminal form | WIRE |
Terminal location | AXIAL |
Maximum time at peak reflow temperature | NOT SPECIFIED |
SF38 | SF31 | SF31_05 | SF32 | SF33 | SF34 | SF35 | SF36 | SF37 | SF39 | |
---|---|---|---|---|---|---|---|---|---|---|
Description | 3 A, SILICON, RECTIFIER DIODE, DO-201AD | 3 A, SILICON, RECTIFIER DIODE, DO-201AD | 3 A, SILICON, RECTIFIER DIODE, DO-201AD | 3 A, SILICON, RECTIFIER DIODE, DO-201AD | 3 A, 150 V, SILICON, RECTIFIER DIODE, DO-201AD | 3 A, SILICON, RECTIFIER DIODE, DO-201AD | 3 A, 300 V, SILICON, RECTIFIER DIODE, DO-201AD | 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD | 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD | 3 A, SILICON, RECTIFIER DIODE, DO-201AD |
Is it Rohs certified? | conform to | conform to | - | conform to | conform to | conform to | conform to | conform to | conform to | conform to |
Maker | EIC [EIC discrete Semiconductors] | EIC [EIC discrete Semiconductors] | - | EIC [EIC discrete Semiconductors] | - | EIC [EIC discrete Semiconductors] | EIC [EIC discrete Semiconductors] | EIC [EIC discrete Semiconductors] | - | EIC [EIC discrete Semiconductors] |
Reach Compliance Code | compli | compli | - | compli | compli | compli | compli | compli | compli | compli |
Other features | HIGH RELIABILITY | HIGH RELIABILITY | - | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY |
application | SUPER FAST RECOVERY | SUPER FAST RECOVERY | - | SUPER FAST RECOVERY | SUPER FAST RECOVERY | SUPER FAST RECOVERY | SUPER FAST RECOVERY | SUPER FAST RECOVERY | SUPER FAST RECOVERY | SUPER FAST RECOVERY |
Shell connection | ISOLATED | ISOLATED | - | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
Configuration | SINGLE | SINGLE | - | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
Diode component materials | SILICON | SILICON | - | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
Diode type | RECTIFIER DIODE | RECTIFIER DIODE | - | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE |
Maximum forward voltage (VF) | 4 V | 0.95 V | - | 0.95 V | 0.95 V | 0.95 V | 1.7 V | 1.7 V | 1.7 V | 4 V |
JEDEC-95 code | DO-201AD | DO-201AD | - | DO-201AD | DO-201AD | DO-201AD | DO-201AD | DO-201AD | DO-201AD | DO-201AD |
JESD-30 code | O-PALF-W2 | O-PALF-W2 | - | O-PALF-W2 | O-PALF-W2 | O-PALF-W2 | O-PALF-W2 | O-PALF-W2 | O-PALF-W2 | O-PALF-W2 |
Maximum non-repetitive peak forward current | 125 A | 125 A | - | 125 A | 125 A | 125 A | 125 A | 125 A | 125 A | 125 A |
Number of components | 1 | 1 | - | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
Phase | 1 | 1 | - | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 2 | 2 | - | 2 | 2 | 2 | 2 | 2 | 2 | 2 |
Maximum operating temperature | 150 °C | 150 °C | - | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
Minimum operating temperature | -65 °C | -65 °C | - | -65 °C | -65 °C | -65 °C | -65 °C | -65 °C | -65 °C | -65 °C |
Maximum output current | 3 A | 3 A | - | 3 A | 3 A | 3 A | 3 A | 3 A | 3 A | 3 A |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | ROUND | ROUND | - | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
Package form | LONG FORM | LONG FORM | - | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
Maximum repetitive peak reverse voltage | 800 V | 50 V | - | 100 V | 150 V | 200 V | 300 V | 400 V | 600 V | 1000 V |
Maximum reverse current | 10 µA | 10 µA | - | 10 µA | 10 µA | 10 µA | 10 µA | 10 µA | 10 µA | 10 µA |
Maximum reverse recovery time | 0.035 µs | 0.035 µs | - | 0.035 µs | 0.035 µs | 0.035 µs | 0.035 µs | 0.035 µs | 0.035 µs | 0.035 µs |
surface mount | NO | NO | - | NO | NO | NO | NO | NO | NO | NO |
Terminal form | WIRE | WIRE | - | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE |
Terminal location | AXIAL | AXIAL | - | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL |
Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |