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SDR60U120CTPS

Description
Rectifier Diode, 1 Phase, 2 Element, 60A, 1200V V(RRM), Silicon, TO-259, HERMETIC SEALED PACKAGE-3
CategoryDiscrete semiconductor    diode   
File Size92KB,2 Pages
ManufacturerSSDI
Websitehttp://www.ssdi-power.com/
Download Datasheet Parametric View All

SDR60U120CTPS Overview

Rectifier Diode, 1 Phase, 2 Element, 60A, 1200V V(RRM), Silicon, TO-259, HERMETIC SEALED PACKAGE-3

SDR60U120CTPS Parametric

Parameter NameAttribute value
MakerSSDI
Parts packaging codeTO-259
package instructionHERMETIC SEALED PACKAGE-3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
applicationULTRA FAST RECOVERY
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeTO-259
JESD-30 codeR-XSFM-P3
Maximum non-repetitive peak forward current400 A
Number of components2
Phase1
Number of terminals3
Maximum output current60 A
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1200 V
Maximum reverse recovery time0.055 µs
surface mountNO
Terminal formPIN/PEG
Terminal locationSINGLE
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDR60U080CT
thru
SDR60U120CT
Series
60 AMP
ULTRA FAST LOW VF
CENTERTAP RECTIFIER
800 -1200 Volts
55 nsec
Features:
DESIGNER’S DATA SHEET
Part Number / Ordering Information
1/
SDR60
___
___
___
___
___
Screening
2/
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
Package Type
N = TO-258
P = TO-259
Configuration
CT = Common Cathode
CA = Common Anode
D = Doubler
DR = Doubler Reverse
Voltage/Family
080 = 800V
090 = 900V
100 = 1000V
110 = 1100V
120 = 1200V
Recovery Time
U = Ultra Fast
Ultra Fast Recovery: 40 nsec typical
High Surge Rating
Low Reverse Leakage Current
Low Forward Voltage Drop
Low Junction Capacitance
Hermetically Sealed Package
Gold Eutectic Die Attach available
Ultrasonic Aluminum Wire Bonds
Ceramic Seals for improved hermeticity available
Available in Centertap and Doubler versions
TX, TXV, Space Level Screening Available Consult
Factory.
Maximum Ratings
Symbol
Value
Units
Peak Repetitive Reverse and
DC Blocking Voltage
SDR60U080
SDR60U090
SDR60U100
SDR60U110
SDR60U120
V
RRM
V
RWM
V
R
Io
I
FSM
Top & Tstg
R
θJE
TO-258 (N)
800
900
1000
1100
1200
60
400
-65 to +200
1.0
0.75
Volts
Average Rectified Forward Current
Peak Surge Current
(Resistive Load, 60 Hz Sine Wave, T
A
= 25ºC)
3/4/
(8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to
Reach Equilibrium Between Pulses, T
A
= 25ºC)
3/
Amps
Amps
ºC
ºC/W
Operating & Storage Temperature
Maximum Thermal Resistance
Junction to Case, each individual diode
Junction to Case
3/
TO-259 (P)
1/ For ordering information, price, operating curves, and availability - Contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Both legs tied together.
4/ Package limited.
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0145B
DOC

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