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SM4006

Description
1 A, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size38KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
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SM4006 Overview

1 A, SILICON, SIGNAL DIODE

SM4006 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
Reach Compliance Codecompli
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
Maximum non-repetitive peak forward current30 A
Number of components1
Maximum operating temperature175 °C
Maximum output current1 A
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage800 V
surface mountYES
Maximum time at peak reflow temperatureNOT SPECIFIED
SM4001 - SM4007
PRV : 50 - 1000 Volts
Io : 1.0 Ampere
FEATURES :
*
*
*
*
*
*
Glass Passivated Junction
Hight Current Capability
Low Forward voltage Drop
Hight Reliability and Low Leakage
For Surface Mount Application
Plastic Material - UL Flammability
Classification Rating 94 V-0
* Pb / RoHS Free
SURFACE MOUNT
GLASS PASSIVATED JUNCTION
MELF
Cathode Mark
φ
0.102 (2.6)
0.094 (2.4)
0.022(0.55)
0.205(5.2)
0.189(4.8)
Dimensions in inches and ( millimeters )
Mechanical Data
* Case : MELF, Plastic
* Terminals : Solderable per MIL-STD-202, Method 208
* Polarity : Color band
* Approx Weight : 0.25 grams
* Mounting Position : Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Single phase, half wave, 60 Hz, resistive or inductive load
For capacitive load, derate current by 20%
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Reverse Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3ms single
half sine wave Superimposed on rated load
(JEDEC Method )
Maximum Forward Voltage at I
F
= 1.0 A.
Maximum DC Reverse Current
at rated DC Blocking Voltage
Ta = 25
°C
Ta = 125
°C
SYMBOL
SM4001 SM4002 SM4003 SM4004 SM4005 SM4006 SM4007
UNIT
V
RRM
V
RMS
V
R
I
F(AV)
I
FSM
V
F
I
R
R
θJA
C
J
T
J
,T
STG
50
35
50
100
70
100
200
140
200
400
280
400
1.0
30
1.1
5.0
50
50
15
-55 to +150
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
V
μA
μA
°C/W
pF
°C
Typical Thermal Resistance, Junction to Ambient
Typical Junction Capacitance (Note1)
Operating and Storage Temperature Range
Note :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0 V
DC
Page 1 of 2
Rev. 02 : March 25, 2005

SM4006 Related Products

SM4006 SM4001 SM4003 SM4002 SM4005 SM4004 SM4007
Description 1 A, SILICON, SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-213AB 1 A, 100 V, SILICON, SIGNAL DIODE 1 A, SILICON, SIGNAL DIODE 1 A, 400 V, SILICON, SIGNAL DIODE SIGNAL DIODE
Is it lead-free? Lead free Lead free Lead free Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to
Maker EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors]
Reach Compliance Code compli compli compli compli compli compli compliant
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE - SINGLE
Maximum forward voltage (VF) 1.3 V 1.3 V 1.3 V 1.3 V 1.3 V - 1.3 V
Maximum non-repetitive peak forward current 30 A 30 A 30 A 30 A 30 A - 30 A
Number of components 1 1 1 1 1 - 1
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C 175 °C - 175 °C
Maximum output current 1 A 1 A 1 A 1 A 1 A - 1 A
Maximum repetitive peak reverse voltage 800 V 50 V 200 V 100 V 600 V - 1000 V
surface mount YES YES YES YES YES - YES
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