DSSK 10-018A
Power Schottky Rectifier
with common cathode
Preliminary Data
I
FAV
= 2x5 A
V
RRM
= 180 V
V
F
= 0.62 V
V
RSM
V
180
V
RRM
V
180
Type
A
C
A
TO-220 AB
A
C
A
DSSK 10-018A
C (TAB)
A = Anode, C = Cathode , TAB = Cathode
Symbol
I
FRMS
I
FAV
I
FAV
I
FSM
E
AS
I
AR
(dv/dt)
cr
T
VJ
T
VJM
T
stg
P
tot
M
d
Weight
Conditions
T
C
= 165°C; rectangular, d = 0.5
T
C
= 165°C; rectangular, d = 0.5; per device
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
I
AS
= tbd A; L = 180 µH; T
VJ
= 25°C; non repetitive
V
A
=1.5 • V
RRM
typ.; f=10 kHz; repetitive
Maximum Ratings
35
5
10
120
tbd
tbd
tbd
-55...+175
175
-55...+150
A
A
A
A
mJ
A
V/ms
°C
°C
°C
W
Nm
g
Features
• International standard package
• Very low V
F
• Extremely low switching losses
• Low I
RM
-values
• Epoxy meets UL 94V-0
Applications
• Rectifiers in switch mode power
supplies (SMPS)
• Free wheeling diode in low voltage
converters
T
C
= 25°C
mounting torque
typical
90
0.4...0.6
2
Advantages
• High reliability circuit operation
• Low voltage peaks for reduced
protection circuits
• Low noise switching
• Low losses
Symbol
I
R
V
F
Conditions
T
VJ
= 25°C V
R
= V
RRM
T
VJ
= 100°C V
R
= V
RRM
I
F
= 5 A;
I
F
= 5 A;
I
F
= 10 A;
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
Characteristic Values
typ.
max.
0.3
2.5
0.62
0.78
0.68
1.7
0.5
mA
mA
V
V
V
K/W
K/W
Dimensions see outlines.pdf
R
thJC
R
thCH
Pulse test:
Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, Conditions and dimensions.
007
© 2000 IXYS All rights reserved
1-2
DSSK 10-018A
100
A
I
F
I
R
10
mA
T =175°C
VJ
1
150°C
1000
pF
C
T
0.1
125°C
10
T
VJ
=
175°C
125°C
25°C
100°C
100
0.01
75°C
0.001
50°C
25°C
T
VJ
= 25°C
1
0.0
0.0001
0.2
0.4
0.6
0.8 1.0 V 1.2
V
F
0
50
100
150 V 200
V
R
10
0
50
100
150 V 200
V
R
Fig. 1 Maximum forward voltage
drop characteristics
40
A
35
I
F(AV)
30
25
d=0.5
DC
Fig. 2 Typ. value of reverse current I
R
versus reverse voltage V
R
35
W
30
P
(AV)
25
20
d=
DC
0.5
0.33
0.25
0.17
0.08
Fig. 3 Typ. junction capacitance C
T
versus reverse voltage V
R
10000
A
I
FSM
20
15
15
10
5
0
0
40
80
120
T
C
160 °C
10
5
0
0
5
10
15
20 25
I
F(AV)
1000
30
A
100
10
100
1000 µs 10000
t
P
Fig. 4 Average forward current I
F(AV)
versus case temperature T
C
2
1
K/W
Z
thJC
D=0.5
0.33
0.25
0.17
0.08
Single Pulse
Fig. 5 Forward power loss
characteristics
0.1
0.01
0.0001
DSSK 10-018A
0.001
0.01
0.1
1
t
s
10
Fig. 6 Transient thermal impedance junction to case at various duty cycles
Note: All curves are per diode
007
© 2000 IXYS All rights reserved
2-2
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