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SB256GW

Description
Bridge Rectifier Diode, 25A, 600V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size697KB,2 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

SB256GW Overview

Bridge Rectifier Diode, 25A, 600V V(RRM),

SB256GW Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationBRIDGE, 4 ELEMENTS
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
Humidity sensitivity level1
Maximum non-repetitive peak forward current300 A
Number of components4
Maximum operating temperature150 °C
Maximum output current25 A
Maximum repetitive peak reverse voltage600 V
surface mountNO
SB 15, 25, 35G SERIES
High Current 15, 25, 35 AMPS. Single Phase Glass Passivated Bridge Rectifiers
Voltage Range
50 to 1000 Volts
Current
15.0/25.0/35.0 Amperes
Features
DIA .193(4.9)
HOLE FOR #8 SCREW
SB35
1.14(29.0)
1.01(25.7)
.692(17.6)
.612(15.5)
AC
SB35-W
1.14(29.0)
1.01(25.7)
DIA .193(4.9)
HOLE FOR #8 SCREW
.752(19.1)
.672(17.1)
UL Recognized File # E-96005
Glass passivated junction
Metal case with an electrically isolated
epoxy
Rating to 1,000V PRV.
High efficiency
Mounting: thru hole for #8 screw
High temperature soldering guaranteed:
260℃ / 10 seconds at 5 lbs., ( 2.3 kg )
tension
Leads solderable per MIL-STD-202
Method 208
Isolated voltage from case to lead over
2000 volts
1.14(29.0)
1.01(25.7)
.692(17.6)
.612(15.5)
.602(15.3)
.522(13.3)
1.14(29.0)
1.01(25.7)
.752(19.1)
.672(17.1)
.752(19.1)
.672(17.1)
.490(12.4)
.410(10.4)
.25(6.35)
.040(1.0)
DIA TYP
1.2(30.5)
MIN.
.442(11.23)
.432(10.97)
.442(11.23)
.432(10.97)
.93(23.5)
.81(20.5)
SB35-M
1.14(29.0)
1.01(25.7)
DIA .193(4.9)
HOLE FOR #8 SCREW
.692(17.6)
.612(15.5)
1.14(29.0)
1.01(25.7)
.692(17.6)
.612(15.5)
.692(17.6)
.612(15.5)
.692(17.6)
.612(15.5)
.034(0.86)
.030(0.76)
.25(6.35)
.442(11.23)
.432(10.97)
.93(23.5)
.81(20.5)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
@T
C
= 55℃
SB15
SB25
SB35
Symbol
-05
-1
100
70
100
-2
200
140
200
-4
400
280
400
15.0
25.0
35.0
300
300
400
1.1
10
-6
600
420
600
-8
800
560
800
-10
1000
700
1000
Units
V
V
V
A
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
Peak Forward Surge Current,
SB15
Single Sine-wave Superimposed on SB25
Rated Load (JEDEC method )
SB35
Maximum Instantaneous Forward SB15 7.5A
Voltage Drop Per Element
SB25 12.5A
at Specified Current
SB35 17.5A
Maximum DC Reverse Current
at Rated DC Blocking Voltage Per Element
Typical Thermal Resistance (Note 1)
Operating and Storage Temperature Range
I
FSM
V
F
I
R
R
θ
JC
T
J
,T
STG
A
V
uA
℃/W
2.0
-50 to +150
Notes: 1. Thermal Resistance from Junction to Case.
2. Suffix “W” - Wire Lead Structure/”M” - Terminal Location Face to Face.
- 770 -

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