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AW005G_05

Description
1.5 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size41KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
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AW005G_05 Overview

1.5 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE

AW005G - AW10G
PRV : 50 - 1000 Volts
Io : 1.5 Amperes
FEATURES :
*
*
*
*
*
*
*
*
Glass passivated chip
High case dielectric strength
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Ideal for printed circuit board
Pb / RoHS Free
AVALANCHE GLASS PASSIVATED
BRIDGE RECTIFIERS
WOB
0.39 (10.0)
0.31 (7.87)
0.22 (5.59)
0.18 (4.57)
+
AC
-
1.00 (25.4)
MIN.
1.10 (27.9)
MIN.
0.034 (0.86)
0.028 (0.71)
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated leads solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 1.29 grams
AC
+
-
AC
0.22 (5.59)
0.18 (4.57)
0.22 (5.59)
0.18 (4.57)
Dimension in inches and (millimeter)
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Minimum Avalanche Breakdown Voltage at 100
µA
Maximum Avalanche Breakdown Voltage at 100
µA
Maximum Average Forward Current
0.375" (9.5 mm) lead length
Tc = 25°C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Rating for fusing ( t < 8.3 ms. )
Maximum Forward Voltage per Diode at I
F
= 1.0 A
Maximum DC Reverse Current
Ta = 25
°C
at Rated DC Blocking Voltage
Ta = 100
°C
Typical Junction Capacitance per Diode (Note 1)
Typical Thermal Resistance (Note 2)
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL
V
RRM
V
RMS
V
DC
V
BO(min.)
V
BO(max.)
I
F(AV)
I
FSM
I
2
t
V
F
I
R
I
R(H)
C
J
R
θ
JA
T
J
T
STG
AW AW
005G 01G
50
35
50
100
550
100
70
100
150
600
AW
02G
200
140
200
250
700
AW
04G
400
280
400
450
900
1.5
50
AW
06G
600
420
600
700
1150
AW
08G
800
560
800
900
1350
AW
10G
1000
700
1000
1100
1550
UNIT
V
V
V
V
V
A
A
A
2
S
V
µA
mA
pf
°C/W
°
C
°
C
10
1.0
10
1.0
24
36
- 50 to + 150
- 50 to + 150
Notes :
1 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts.
2 ) Thermal resistance from Junction to Ambient at 0.375" (9.5 mm) lead length P.C. Board mounting.
Page 1 of 2
Rev. 02 : March 25, 2005

AW005G_05 Related Products

AW005G_05 AW005G AW01G AW02G AW06G AW04G AW10G AW08G
Description 1.5 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
Is it lead-free? - Lead free Lead free Lead free Lead free Lead free Lead free Lead free
Is it Rohs certified? - conform to conform to conform to conform to conform to conform to conform to
Reach Compliance Code - compli compli compli compli compli compli compli
ECCN code - EAR99 EAR99 EAR99 EAR99 - EAR99 -
Configuration - BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode type - BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) - 1 V 1 V 1 V 1 V 1 V 1 V 1 V
Maximum non-repetitive peak forward current - 50 A 50 A 50 A 50 A 50 A 50 A 50 A
Number of components - 4 4 4 4 4 4 4
Maximum output current - 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A
Maximum repetitive peak reverse voltage - 50 V 100 V 200 V 600 V 400 V 1000 V 800 V
surface mount - NO NO NO NO NO NO NO

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