MQSMLJ170E3TR datasheet, PDF - EEWORLD Datasheet

MQSMLJ170E3TR: DescriptionTrans Voltage Suppressor Diode, 3000W, 170V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, PLASTIC PACKAGE-2; CategoryDiscrete semiconductor diode; File Size190KB，4 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com; Environmental Compliance

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MQSMLJ170E3TR Overview

Trans Voltage Suppressor Diode, 3000W, 170V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, PLASTIC PACKAGE-2

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Microsemi
Parts packaging code	DO-214AB
package instruction	PLASTIC PACKAGE-2
Contacts	2
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum breakdown voltage	231 V
Minimum breakdown voltage	189 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 code	DO-214AB
JESD-30 code	R-PDSO-C2
JESD-609 code	e3
Humidity sensitivity level	1
Maximum non-repetitive peak reverse power dissipation	3000 W
Number of components	1
Number of terminals	2
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	UNIDIRECTIONAL
Maximum power dissipation	1.61 W
Certification status	Not Qualified
Guideline	MIL-19500
Maximum repetitive peak reverse voltage	170 V
surface mount	YES
technology	AVALANCHE
Terminal surface	MATTE TIN
Terminal form	C BEND
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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