K4H560438E-UCAA0 datasheet, PDF

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K4H560438E-UCAA0: DescriptionDDR DRAM, 64MX4, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66; Categorystorage storage; File Size298KB，23 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/; Environmental Compliance

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K4H560438E-UCAA0 Overview

DDR DRAM, 64MX4, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66

K4H560438E-UCAA0 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	SAMSUNG
Parts packaging code	TSOP2
package instruction	TSSOP,
Contacts	66
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	0.75 ns
Other features	AUTO/SELF REFRESH
JESD-30 code	R-PDSO-G66
length	22.22 mm
memory density	268435456 bit
Memory IC Type	DDR DRAM
memory width	4
Humidity sensitivity level	2
Number of functions	1
Number of ports	1
Number of terminals	66
word count	67108864 words
character code	64000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	64MX4
Package body material	PLASTIC/EPOXY
encapsulated code	TSSOP
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Peak Reflow Temperature (Celsius)	260
Certification status	Not Qualified
Maximum seat height	1.2 mm
self refresh	YES
Maximum supply voltage (Vsup)	2.7 V
Minimum supply voltage (Vsup)	2.3 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	GULL WING
Terminal pitch	0.65 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	40
width	10.16 mm

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DDR SDRAM 256Mb E-die (x4, x8) Pb-Free

DDR SDRAM

256Mb E-die DDR SDRAM Specification

66 TSOP-II with Pb-Free

(RoHS compliant)

Revision 1.1

October, 2004

Rev. 1.1 October, 2004

K4H560438E-UCAA0 Related Products

	K4H560438E-UCAA0	K4H560438E-ULAA0	K4H560838E-UCAA0	K4H560838E-ULAA0
Description	DDR DRAM, 64MX4, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66	DDR DRAM, 64MX4, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66	DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66	DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66
Is it Rohs certified?	conform to	conform to	conform to	conform to
Maker	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG
Parts packaging code	TSOP2	TSOP2	TSOP2	TSOP2
package instruction	TSSOP,	TSSOP,	TSSOP,	TSSOP,
Contacts	66	66	66	66
Reach Compliance Code	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99
access mode	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Maximum access time	0.75 ns	0.75 ns	0.75 ns	0.75 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
JESD-30 code	R-PDSO-G66	R-PDSO-G66	R-PDSO-G66	R-PDSO-G66
length	22.22 mm	22.22 mm	22.22 mm	22.22 mm
memory density	268435456 bit	268435456 bit	268435456 bit	268435456 bit
Memory IC Type	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM
memory width	4	4	8	8
Humidity sensitivity level	2	2	2	2
Number of functions	1	1	1	1
Number of ports	1	1	1	1
Number of terminals	66	66	66	66
word count	67108864 words	67108864 words	33554432 words	33554432 words
character code	64000000	64000000	32000000	32000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C
organize	64MX4	64MX4	32MX8	32MX8
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSSOP	TSSOP	TSSOP	TSSOP
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Peak Reflow Temperature (Celsius)	260	260	260	260
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1.2 mm	1.2 mm	1.2 mm	1.2 mm
self refresh	YES	YES	YES	YES
Maximum supply voltage (Vsup)	2.7 V	2.7 V	2.7 V	2.7 V
Minimum supply voltage (Vsup)	2.3 V	2.3 V	2.3 V	2.3 V
Nominal supply voltage (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V
surface mount	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal pitch	0.65 mm	0.65 mm	0.65 mm	0.65 mm
Terminal location	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	40	40	40	40
width	10.16 mm	10.16 mm	10.16 mm	10.16 mm

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