, O
ne.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Silicon NPN Power Transistor
2SC2577
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
V
(BR
)CEO= SOV(Min)
• Good Linearity of h
F
E
• Complement to Type 2SA1102
1
t *"V
TO-3PM package
Jl H £J
2. COLLECTOR
APPLICATIONS
• Designed for audio power amplifier applications
A
m...-
V - . P - - S
A
uQi!
B —
-
— c—
r-
-••>-> i
• •;
^\'
J
Al
;
E'
ABSOLUTE MAXIMUM RATINGS(T
a
=25T)
SYMBOL
PARAMETER
VALUE
UNIT
\-
*-
•«
K
G
-*- *L
y
VCBO
Collector-Base Voltage
120
V
-»-~-j
*•
-*-R
«---0
^^M^.
VCEO
Collector-Emitter Voltage
80
V
DIM
A
B
mm
WIN
MAX
VEBO
Emitter-Base Voltage
6
V
Ic
Collector Current-Continuous
6
A
r
D
E
F
G
H
J
K
L
N
U
R
S
U
IB
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25'C
Junction Temperature
3
A
PC
60
W
Tj
150
"C
T
s
tg
Storage Temperature Range
-55-150
'C
y
19.60
15.50
4.70
0.90
1,90
3.40
2.90
3,20
0.595
20.00
1,90
10,89
4,90
3.35
1.995
5.90
9.90
20.10
15.70
4.90
1.10
2.10
3,60
3.20
3.40
0.605
20.70
2.20
10,91
5.10
3.45
2.100
6.10
110.10
NJ Senii-Couductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate anil reliable at the time ot'eoing
to press. I lowever. N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encouraiics customers to verity that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SC2577
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
lc= 50mA; I
B
= 0
80
V
VcE(sat)
Collector-Emitter Saturation Voltage
lc= 2A; I
B
= 0.2A
1.5
V
ICBO
Collector Cutoff Current
V
CB
= 80V; I
E
= 0
10
uA
IEBO
Emitter Cutoff Current
V
EB
= 6V; l
c
= 0
10
u A
HFE
DC Current Gain
lc= 2A; V
CE
= 4V
50
COB
Output Capacitance
l
E
=0;Vc
B
=10V;f= 1.0MHz
110
PF
f
T
Current-Gain— Bandwidth Product
I
E
=-0.5A;V
CE
=12V
20
MHz
Classifications
0
50-100
P
70-140
Y
90-180