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2SC2577

Description
Power Bipolar Transistor, 6A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
CategoryDiscrete semiconductor    The transistor   
File Size73KB,2 Pages
ManufacturerNew Jersey Semiconductor
Websitehttp://www.njsemi.com
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2SC2577 Overview

Power Bipolar Transistor, 6A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

2SC2577 Parametric

Parameter NameAttribute value
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknow
Maximum collector current (IC)6 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)20 MHz
Base Number Matches1
, O
ne.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Silicon NPN Power Transistor
2SC2577
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
V
(BR
)CEO= SOV(Min)
• Good Linearity of h
F
E
• Complement to Type 2SA1102
1
t *"V
TO-3PM package
Jl H £J
2. COLLECTOR
APPLICATIONS
• Designed for audio power amplifier applications
A
m...-
V - . P - - S
A
uQi!
B —
-
— c—
r-
-••>-> i
• •;
^\'
J
Al
;
E'
ABSOLUTE MAXIMUM RATINGS(T
a
=25T)
SYMBOL
PARAMETER
VALUE
UNIT
\-
*-
•«
K
G
-*- *L
y
VCBO
Collector-Base Voltage
120
V
-»-~-j
*•
-*-R
«---0
^^M^.
VCEO
Collector-Emitter Voltage
80
V
DIM
A
B
mm
WIN
MAX
VEBO
Emitter-Base Voltage
6
V
Ic
Collector Current-Continuous
6
A
r
D
E
F
G
H
J
K
L
N
U
R
S
U
IB
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25'C
Junction Temperature
3
A
PC
60
W
Tj
150
"C
T
s
tg
Storage Temperature Range
-55-150
'C
y
19.60
15.50
4.70
0.90
1,90
3.40
2.90
3,20
0.595
20.00
1,90
10,89
4,90
3.35
1.995
5.90
9.90
20.10
15.70
4.90
1.10
2.10
3,60
3.20
3.40
0.605
20.70
2.20
10,91
5.10
3.45
2.100
6.10
110.10
NJ Senii-Couductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate anil reliable at the time ot'eoing
to press. I lowever. N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encouraiics customers to verity that datasheets are current before placing orders.
Quality Semi-Conductors

2SC2577 Related Products

2SC2577 2SC2577O 2SC2577P 2SC2577Y
Description Power Bipolar Transistor, 6A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin Power Bipolar Transistor, 6A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin Power Bipolar Transistor, 6A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin Power Bipolar Transistor, 6A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknow unknow unknow unknow
Maximum collector current (IC) 6 A 6 A 6 A 6 A
Collector-emitter maximum voltage 80 V 80 V 80 V 80 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 50 50 70 90
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN NPN NPN NPN
surface mount NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 20 MHz 20 MHz 20 MHz 20 MHz
Base Number Matches 1 1 1 1

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