Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1386 2SA1386A
DESCRIPTION
・With
TO-3PN package
・Complement
to type 2SC3519/3519A
APPLICATIONS
・Audio
and general purpose
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
固电
导½
半
PARAMETER
CONDITIONS
2SA1386
2SA1386A
Collector-base voltage
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
INC
Collector-emitter voltage
ANG
H
2SA1386
MIC
E SE
Open emitter
Open base
Open collector
OR
UCT
ND
O
VALUE
-160
-180
-160
-180
-5
-15
-4
UNIT
V
V
2SA1386A
Emitter-base voltage
Collector current
V
A
A
W
℃
℃
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
130
150
-55~150
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2SA1386
I
C
=-25mA ;I
B
=0
2SA1386A
V
CEsat
Collector-emitter saturation voltage
2SA1386
2SA1386A
I
EBO
h
FE
C
ob
f
T
Emitter cut-off current
DC current gain
Output capacitance
I
C
=-5A; I
B
=-0.5A
V
CB
=-160V; I
E
=0
CONDITIONS
2SA1386 2SA1386A
MIN
-160
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
V
-180
-2.0
V
I
CBO
Collector cut-off
Current
-100
V
CB
=-180V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-5A ; V
CE
=-4V
I
E
=0 ; V
CB
=10V;f=1MHz
I
C
=-2A ; V
CE
=-12V
50
500
40
-100
180
μA
μA
Switching times
t
on
t
s
t
f
电半
固
Turn-on time
Storage time
Fall time
Transition frequency
导½
pF
MHz
HAN
INC
P
70-140
Y
90-180
ES
G
I
C
=-5A;R
L
=4Ω
I
B1
=-I
B2
=-1A
V
CC
=40V
MIC
E
OR
UCT
ND
O
0.30
0.70
0.20
μs
μs
μs
h
FE
Classifications
O
50-100
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1386 2SA1386A
固电
IN
导½
半
MIC
E SE
ANG
CH
OR
UCT
ND
O
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1386 2SA1386A
固电
IN
导½
半
MIC
E SE
ANG
CH
OR
UCT
ND
O
4