2N4347 datasheet, PDF - EEWORLD Datasheet

2N4347: DescriptionPower Bipolar Transistor, 5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin; CategoryDiscrete semiconductor The transistor; File Size98KB，1 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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2N4347 Overview

Power Bipolar Transistor, 5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Objectid	1689287758
Reach Compliance Code	compliant
ECCN code	EAR99
YTEOL	0
Shell connection	COLLECTOR
Maximum collector current (IC)	5 A
Collector-emitter maximum voltage	120 V
Configuration	SINGLE
Minimum DC current gain (hFE)	15
JEDEC-95 code	TO-3
JESD-30 code	O-MBFM-P2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	PIN/PEG
Terminal location	BOTTOM
Transistor component materials	SILICON
Nominal transition frequency (fT)	0.2 MHz

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