BSS159NE6906 datasheet, PDF - EEWORLD Datasheet

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BSS159NE6906: DescriptionSmall Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size305KB，9 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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BSS159NE6906 Overview

Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3

BSS159NE6906 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Infineon
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (Abs) (ID)	0.23 A
Maximum drain current (ID)	0.23 A
Maximum drain-source on-resistance	3.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	5.9 pF
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Operating mode	DEPLETION MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.36 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON

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BSS159N

SIPMOS

Small-Signal-Transistor

Features

• N-channel

• Depletion mode

• dv /dt rated

• Available with

GS(th)

indicator on reel

• Pb-free lead-plating; RoHS compliant

Product Summary

DS(on),max

DSS,min

0.13

Ω

SOT-23

Type

BSS159

Package

PG-SOT-23

Pb-free

Yes

Tape and Reel Information

L6327: 3000 pcs/reel

L6906: 3000 pcs/reel sorted in

GS(th)

bands

Marking

SGs

Maximum ratings,

=25 °C, unless otherwise specified

Parameter

Continuous drain current

Symbol Conditions

=25 °C

=70 °C

Pulsed drain current

D,pulse

=25 °C

=0.23 A,

=60 V,

di /dt =200 A/µs,

j,max

=150 °C

Value

0.23

0.18

0.92

Unit

Reverse diode dv /dt

dv /dt

kV/µs

Gate source voltage

ESD sensitivity (HBM) as per

MIL-STD 883

Power dissipation

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

±20

Class 0

tot

stg

=25 °C

0.36

-55 ... 150

55/150/56

°C

see table on next page and diagram 11

Rev. 1.32

page 1

2006-12-11

BSS159NE6906 Related Products

	BSS159NE6906	BSS159NE6327	BSS159NH6327	BSS159NL6327	BSS159NH6906
Description	Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3	Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3	Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3	Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3	Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compliant	compli	compliant	unknown	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Maker	Infineon	-	Infineon	Infineon	Infineon
Contacts	3	3	3	-	3
Configuration	SINGLE WITH BUILT-IN DIODE	-	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V	-	60 V	60 V	60 V
Maximum drain current (Abs) (ID)	0.23 A	-	0.23 A	0.23 A	0.23 A
Maximum drain current (ID)	0.23 A	-	0.23 A	0.23 A	0.23 A
Maximum drain-source on-resistance	3.5 Ω	-	3.5 Ω	3.5 Ω	3.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	5.9 pF	-	5.9 pF	5 pF	5.9 pF
JESD-30 code	R-PDSO-G3	-	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	-	1	1	1
Number of terminals	3	-	3	3	3
Operating mode	DEPLETION MODE	-	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
Maximum operating temperature	150 °C	-	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	NOT SPECIFIED	260	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	-	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	0.36 W	-	0.36 W	0.36 W	0.36 W
surface mount	YES	-	YES	YES	YES
Terminal form	GULL WING	-	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	-	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	-	NOT SPECIFIED	40	NOT SPECIFIED
Transistor component materials	SILICON	-	SILICON	SILICON	SILICON

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