Synchronous DRAM Module, 16MX64, 7ns, CMOS, SIMM-168
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | Micron Technology |
| Parts packaging code | SIMM |
| package instruction | , |
| Contacts | 168 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| access mode | FOUR BANK PAGE BURST |
| Maximum access time | 7 ns |
| Other features | AUTO/SELF REFRESH |
| JESD-30 code | R-XSMA-N168 |
| memory density | 1073741824 bit |
| Memory IC Type | SYNCHRONOUS DRAM MODULE |
| memory width | 64 |
| Number of functions | 1 |
| Number of ports | 1 |
| Number of terminals | 168 |
| word count | 16777216 words |
| character code | 16000000 |
| Operating mode | SYNCHRONOUS |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 16MX64 |
| Package body material | UNSPECIFIED |
| Package shape | RECTANGULAR |
| Package form | MICROELECTRONIC ASSEMBLY |
| Peak Reflow Temperature (Celsius) | 235 |
| Certification status | Not Qualified |
| self refresh | YES |
| Maximum supply voltage (Vsup) | 3.6 V |
| Minimum supply voltage (Vsup) | 3 V |
| Nominal supply voltage (Vsup) | 3.3 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | COMMERCIAL |
| Terminal form | NO LEAD |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | 30 |
| MT16LSDT1664AG-662C2 | MT8LSDT864AG-662C2 | MT8LSDT864AG-10BC2 | MT16LSDT1664AG-10BC2 | |
|---|---|---|---|---|
| Description | Synchronous DRAM Module, 16MX64, 7ns, CMOS, SIMM-168 | Synchronous DRAM Module, 8MX64, 7ns, CMOS, SIMM-168 | Synchronous DRAM Module, 8MX64, 6ns, CMOS, SIMM-168 | Synchronous DRAM Module, 16MX64, 6ns, CMOS, SIMM-168 |
| Maker | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
| Parts packaging code | SIMM | SIMM | SIMM | SIMM |
| Contacts | 168 | 168 | 168 | 168 |
| Reach Compliance Code | compliant | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
| access mode | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST |
| Maximum access time | 7 ns | 7 ns | 6 ns | 6 ns |
| Other features | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
| JESD-30 code | R-XSMA-N168 | R-XSMA-N168 | R-XSMA-N168 | R-XSMA-N168 |
| memory density | 1073741824 bit | 536870912 bit | 536870912 bit | 1073741824 bit |
| Memory IC Type | SYNCHRONOUS DRAM MODULE | SYNCHRONOUS DRAM MODULE | SYNCHRONOUS DRAM MODULE | SYNCHRONOUS DRAM MODULE |
| memory width | 64 | 64 | 64 | 64 |
| Number of functions | 1 | 1 | 1 | 1 |
| Number of ports | 1 | 1 | 1 | 1 |
| Number of terminals | 168 | 168 | 168 | 168 |
| word count | 16777216 words | 8388608 words | 8388608 words | 16777216 words |
| character code | 16000000 | 8000000 | 8000000 | 16000000 |
| Operating mode | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| Maximum operating temperature | 70 °C | 70 °C | 70 °C | 70 °C |
| organize | 16MX64 | 8MX64 | 8MX64 | 16MX64 |
| Package body material | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| self refresh | YES | YES | YES | YES |
| Maximum supply voltage (Vsup) | 3.6 V | 3.6 V | 3.6 V | 3.6 V |
| Minimum supply voltage (Vsup) | 3 V | 3 V | 3 V | 3 V |
| Nominal supply voltage (Vsup) | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| surface mount | NO | NO | NO | NO |
| technology | CMOS | CMOS | CMOS | CMOS |
| Temperature level | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| Terminal form | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE |
EEWorld
subscription
account
EEWorld
service
account
Automotive
development
circle
京公网安备 11010802033920号
EEWORLD