IRFY210R1 datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> IRFY210R1

IRFY210R1: DescriptionPower Field-Effect Transistor, 1.8A I(D), 200V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, HERMETIC SEALED, METAL, TO-220M, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size11KB，1 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/; Environmental Compliance

Download Datasheet Parametric Compare View All

IRFY210R1 Overview

Power Field-Effect Transistor, 1.8A I(D), 200V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, HERMETIC SEALED, METAL, TO-220M, 3 PIN

IRFY210R1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	TT Electronics plc
package instruction	FLANGE MOUNT, S-MSFM-P3
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (ID)	1.8 A
Maximum drain-source on-resistance	1.725 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-257AB
JESD-30 code	S-MSFM-P3
JESD-609 code	e1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	METAL
Package shape	SQUARE
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN SILVER COPPER
Terminal form	PIN/PEG
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON

Preview

Download Datasheet

View All

IRFY210

Dimensions in mm (inches).

10.6 (0.42)

0.8

(0.03)

4.6 (0.18)

16.5 (0.65)

3.70 Dia. Nom

N-Channel MOSFET in

a Hermetically sealed

TO257AB Metal Package.

1.5(0.53)

10.6 (0.42)

1 2 3

12.70 (0.50 min)

DSS

= 200V

= 1.8A

DS(ON)

= 1.725Ω

Ω

All Semelab hermetically sealed products can be

processed in accordance with the requirements

of BS, CECC and JAN, JANTX, JANTXV and

JANS specifications.

2.54 (0.1)

BSC

1.0

(0.039)

2.70

(0.106)

TO257AB (TO220M)

PINOUTS

1 – Gate

2 – Drain

Case – Source

Parameter

DSS

DS(ON)

ISS

td(on)

td(off)

Drain – Source Breakdown Voltage

Continuous Drain Current

Power Dissipation

Static Drain – Source On–State Resistance

Input Capacitance

Total Gate Charge

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

Min.

Typ.

Max.

200

1.8

1.725

Units

Ω

140

6.2

This is a shortform datasheet. For a full datasheet please contact

sales@semelab.co.uk.

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail:

sales@semelab.co.uk

Website:

http://www.semelab.co.uk

Generated

13-Sep-02

IRFY210R1 Related Products

	IRFY210R1	IRFY210
Description	Power Field-Effect Transistor, 1.8A I(D), 200V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, HERMETIC SEALED, METAL, TO-220M, 3 PIN	Power Field-Effect Transistor, 1.8A I(D), 200V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, HERMETIC SEALED, METAL, TO-220M, 3 PIN
Is it Rohs certified?	conform to	incompatible
Maker	TT Electronics plc	TT Electronics plc
package instruction	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-MSFM-P3
Reach Compliance Code	compliant	compli
ECCN code	EAR99	EAR99
Shell connection	SOURCE	SOURCE
Configuration	SINGLE	SINGLE
Minimum drain-source breakdown voltage	200 V	200 V
Maximum drain current (ID)	1.8 A	1.8 A
Maximum drain-source on-resistance	1.725 Ω	1.725 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-257AB	TO-257AB
JESD-30 code	S-MSFM-P3	S-MSFM-P3
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	METAL	METAL
Package shape	SQUARE	SQUARE
Package form	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	PIN/PEG	PIN/PEG
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON

Recommended Resources

Multi-output DC regulated power supply circuit diagram of three-terminal regulator

JF-40A transistor pulse power supply preamplifier schematic circuit

Practical circuit diagram of main power supply and auxiliary power supply

Simple quick charger

555 multi-channel anti-theft alarm circuit

Used to measure circuits with very low irradiation intensity

Bluetooth Protocol Analysis_Basic Concepts: 1. Introduction Bluetooth technology has been around for 20 years since it was first introduced by Ericsson in 1994. From the initial Bluetooth V1.0 to Bluetooth V4.0 (the latest is V4.1, released at ...; Aguilera Wireless Connectivity

What do RF engineers do all day?: First of all, RF engineers must master the technology of circuit system analysis, which is also an indispensable part of engineering. In some communication equipment companies' projects, RF engineers ...; btty038 PCB Design

【RVB2601 Creative Application Development】Work Submission: Cold chain intelligent management system based on CH2601 Author: Liu JianhuaProject BackgroundThe author has been engaged in immunization planning for a long time. The top priority of immunization pla...; lugl4313820 XuanTie RISC-V Activity Zone

[TI recommended course] #Switch-mode power converter compensation is simple and easy#: //training.eeworld.com.cn/TI/show/course/4099...; alexpch TI Technology Forum

[Silicon Labs BG22-EK4108A Bluetooth Development Review] 5. Automatically Create a Serial Printing Project: Serial port printing log is one of the commonly used debugging methods. This post attempts to use SSV5 graphical IDE to configure the serial port. The code that the user needs to write in the whole pr...; dql2016 Development Kits Review Area

[RVB2601 Creative Application Development] + Unboxing and Trial: [i=s]This post was last edited by symic on 2022-3-1 21:31[/i]I have heard of the name of Pingtou Ge for a long time, and finally I have the opportunity to try it out. After an agonizing wait, I finall...; symic XuanTie RISC-V Activity Zone

Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

Popular Components