MRF18030ASR3 datasheet, PDF - EEWORLD Datasheet

MRF18030ASR3: DescriptionRF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, NI-400S, CASE 465F-04, 2 PIN; CategoryDiscrete semiconductor The transistor; File Size259KB，8 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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MRF18030ASR3 Overview

RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, NI-400S, CASE 465F-04, 2 PIN

Parameter Name	Attribute value
Maker	Motorola ( NXP )
package instruction	NI-400S, CASE 465F-04, 2 PIN
Reach Compliance Code	unknown
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	65 V
FET technology	METAL-OXIDE SEMICONDUCTOR
highest frequency band	L BAND
JESD-30 code	R-CDFP-F2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	FLATPACK
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	83.3 W
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON

	MRF18030ASR3	MRF18030AR3
Description	RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, NI-400S, CASE 465F-04, 2 PIN	RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, NI-400, CASE 465E-04, 2 PIN
Maker	Motorola ( NXP )	Motorola ( NXP )
package instruction	NI-400S, CASE 465F-04, 2 PIN	NI-400, CASE 465E-04, 2 PIN
Reach Compliance Code	unknown	unknown
Shell connection	SOURCE	SOURCE
Configuration	SINGLE	SINGLE
Minimum drain-source breakdown voltage	65 V	65 V
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
highest frequency band	L BAND	L BAND
JESD-30 code	R-CDFP-F2	R-CDFM-F2
Number of components	1	1
Number of terminals	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	200 °C	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLATPACK	FLANGE MOUNT
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	83.3 W	83.3 W
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	FLAT	FLAT
Terminal location	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON

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