S71WS256ND0BAIEZ3 datasheet, PDF

S71WS256ND0BAIEZ3: DescriptionMemory Circuit, 32MX16, CMOS, PBGA84, 12 X 9 MM, 1.20 MM HEIGHT, LEAD FREE COMPLIANT, FBGA-84; Categorystorage storage; File Size4MB，153 Pages; ManufacturerSPANSION; Websitehttp://www.spansion.com/; Environmental Compliance

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S71WS256ND0BAIEZ3 Overview

Memory Circuit, 32MX16, CMOS, PBGA84, 12 X 9 MM, 1.20 MM HEIGHT, LEAD FREE COMPLIANT, FBGA-84

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	SPANSION
Parts packaging code	BGA
package instruction	TFBGA,
Contacts	84
Reach Compliance Code	compliant
Other features	PSRAM IS ORGANIZED AS 8M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE
JESD-30 code	R-PBGA-B84
JESD-609 code	e1
length	12 mm
memory density	536870912 bit
Memory IC Type	MEMORY CIRCUIT
memory width	16
Humidity sensitivity level	3
Number of functions	1
Number of terminals	84
word count	33554432 words
character code	32000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	32MX16
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	260
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum supply voltage (Vsup)	1.95 V
Minimum supply voltage (Vsup)	1.65 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	TIN SILVER COPPER
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	40
width	9 mm

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