RH1011
Voltage Comparator
DESCRIPTION
The RH1011 is a general purpose comparator with signifi-
cantly better input characteristics than the LM111. Al-
though pin compatible with the LM111, it offers four times
lower bias current, six times lower offset voltage and five
times higher voltage gain.
The wafer lots are processed to Linear Technology’s in-
house Class S flow to yield circuits usable in stringent
military applications.
, LTC and LT are registered trademarks of Linear Technology Corporation.
ABSOLUTE
MAXIMUM
RATINGS
Supply Voltage (Pin 8 to Pin 4)................................ 36V
Output to Negative Supply (Pin 7 to Pin 4) ............. 35V
Ground to Negative Supply (Pin 1 to Pin 4) ............ 30V
Differential Input Voltage ....................................... ± 35V
Voltage at STROBE Pin (Pin 6 to Pin 8) .................... 5V
Input Voltage (Note 1) ....................... Equal to Supplies
Output Short-Circuit Duration ............................. 10 sec
Operating Temperature Range
(Note 2) ........................................... – 55°C to 125°C
Storage Temperature Range ................. – 65°C to 150°C
Lead Temperature (Soldering, 10 sec).................. 300°C
BUR -I CIRCUIT
18V
15V
1.3k
8
8
50k
2
+
–
4
5
7
50k
100k
2V
3
–
7
200Ω
50k
3
1
OR
2
+
4
1
604Ω
–18V
–15V
RH1011 BI
PACKAGE I FOR ATIO
TOP VIEW
V
+
8
GND 1
–
TOP VIEW
7 OUTPUT
TOP VIEW
GND 1
+INPUT 2
–INPUT 3
V
–
4
J8 PACKAGE
8-LEAD CERDIP
8
7
6
5
V
+
OUTPUT
BALANCE/
STROBE
BALANCE
GND 1
+INPUT 2
NC 4
V
–
5
W PACKAGE
10-LEAD CERPAC
–
+INPUT 2
–INPUT 3
BALANCE/
6
STROBE
5 BALANCE
4
V
–
–INPUT 3
H PACKAGE
8-LEAD TO-5 METAL CAN
U
W W
+
W
U
W
U
U
U U
+
10 V
+
9 OUTPUT
8 NC
BALANCE/
7 STROBE
6 BALANCE
1
RH1011
TABLE 1: ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER
V
OS
I
OS
I
B
V
OS
T
A
VOL
Input Offset Voltage
R
S
50k
Input Offset Curret
Input Bias Current
Input Offset Voltage Drift
Large Signal Voltage Gain
T
MIN
T T
MAX
R = 1k to 15V,
– 10V V
OUT
14.5V
R = 500 to 5V,
0.5V V
OUT
4.5V
CMRR
Common Mode Rejection
Ratio
Input Voltage Range
t
d
V
OL
Response Time
Output Saturation Voltage
Output Leakage Current
Positive Supply Current
Negative Supply Current
Strobe Current
Input Capacitance
Minimum to Ensure Output
Transisor is Turned Off
7,9
500
6
V
IN
= 5mV, I
SINK
= 8mA
V1 = 0V, I
SINK
= 50mA
V
IN
= 5mV, V1 = – 15V,
V
OUT
= 20V
V
S
= ± 15V
V
S
= Single 5V
8,9
8,9
6,9
CONDITIONS
NOTES
3
4
4
3
4
5,9
200
50
90
– 14.5
0.5
13
3.0
250
0.4
1.5
10
4.0
2.5
1
1
1
1
1
0.5
1.5
500
2,3
2,3
2,3
4
4
1
– 14.5
0.5
13
3.0
(Preirradiation) (Note 10)
T
A
= 25°C
MIN TYP MAX
1.5
2.0
4
50
65
SUB-
– 55°C T
A
125°C
GROUP MIN TYP MAX
1
1
1
1
1
3.0
3.0
6
80
80
25
SUB-
GROUP
2,3
2,3
2,3
2,3
2,3
UNITS
mV
mV
nA
nA
nA
µV/°C
V/mV
V/mV
dB
V
V
ns
V
V
nA
mA
mA
µA
pF
TABLE 1A: ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER
V
OS
I
OS
I
B
A
VOL
CMRR
Input Offset Voltage
Input Offset Current
Input Bias Current
Large-Signal Voltage Gain R = 1k to 15V
– 10V V
OUT
14.5V
Common Mode Rejection
Ratio
Input Voltage Range
V
OL
Output Saturation Voltage
Output Leakage Current
V
S
= ± 15V
V
S
= Single 5V
V
IN
= 5mV, I
SINK
= 8mA
V
IN
= 0V, I
SINK
= 50mA
V
IN
= 5mV, V1 = – 15V
V
OUT
= 20V
8,9
200
90
– 14.5
0.5
CONDITIONS
(Postirradiation) (Note 10)
50Krad(Si) 100Krad(Si) 200Krad(Si)
MIN MAX MIN MAX MIN MAX UNITS
1.5
4
150
150
90
13
3.0
0.4
1.5
10
100
90
1.5
20
200
50
86
13
3.0
0.4
1.5
100
2
50
300
mV
nA
nA
V/mV
dB
V
V
V
V
nA
10Krad(Si)
20Krad(Si)
NOTES MIN MAX MIN MAX
1.5
4
50
200
90
13 – 14.5
3.0 0.5
0.4
1.5
10
1.5
4
100
– 14.5 13 – 14.5 13 – 14.5
0.5 3.0 0.5 3.0 0.5
0.4
1.5
100
0.4
1.5
100
2
RH1011
TABLE 1A: ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER
Positive Supply Current
Negative Supply Current
Strobe Current
Input Capacitance
Note 1:
Inputs may be clamped to supplies with diodes so that maximum
input voltage actually exceeds supply voltage by one diode drop. See Input
Protection discussion in the LT
®
1011 data sheet.
Note 2:
T
JMAX
= 150°C.
Note 3:
Output is sinking 1.5mA with V
OUT
= 0V.
Note 4:
These specifications apply for all supply voltages from a single 5V
to ± 15V, the entire input voltage range and for both high and low output
states. The high state is I
SINK
100µA, V
OUT
( V
+
– 1V) and the low state
is I
SINK
0.8V. Therefore, this specication defines a worst-case error band
that includes effects due to common mode signals, voltage gain and
output load.
Note 5:
Drift is calculated by dividing the offset difference measured at
minimum and maximum temperatures by the temperature difference.
Minimum to Ensure Output
Transistor is Truned Off
7,9
500
6 (Typ)
CONDITIONS
(Postirradiation) (Note 10)
50Krad(Si) 100Krad(Si) 200Krad(Si)
MIN MAX MIN MAX MIN MAX UNITS
4.0
2.5
500
6 (Typ)
500
6 (Typ)
4.0
2.5
500
6 (Typ)
4.0
2.5
mA
mA
µA
pF
10Krad(Si)
20Krad(Si)
NOTES MIN MAX MIN MAX
4.0
2.5
500
6 (Typ)
4.0
2.5
Note 6:
Response time is measured with a 100mV step and 5V overdrive.
The output load is a 500 resistor tied to 5V. Time measurement is taken
when the output crosses 1.4V.
Note 7:
Do not short the STROBE pin to ground. It should be current
driven at 3mA to 5mA for the shortest strobe time. Currents as low as
500µA will strobe the RH1011 if speed is not important. External leakage
on the STROBE pin in excess of 0.2µA when the strobe is “off ” can cause
offset voltage shifts.
Note 8:
See graph, Input Offset Voltage vs Common Mode Voltage on the
LT1011 data sheet.
Note 9:
Guaranteed by design, characterization or correlation to other
tested parameters.
Note 10:
V
S
= ± 15V, V
CM
= 0V, R
S
= 0 , T
A
= 25°C, V1 = – 15V, output at
Pin 7, unless otherwise noted.
TABLE 2: ELECTRICAL TEST REQUIRE E TS
MIL-STD-883 TEST REQUIREMENTS
Final Electrical Test Requirements (Method 5004)
Group A Test Requirements (Method 5005)
Group C and D End Point Electrical Parameters
(Method 5005)
* PDA Applies to subgroup 1. See PDA Test Notes.
SUBGROUP
1*,2,3,4
1,2,3,4
1
PDA Test Notes
The PDA is specified as 5% based on failures from group A, subgroup 1,
tests after cooldown as the final electrical test in accordance with method
5004 of MIL-STD-883 Class B. The verified failures (including Delta
parameters) of group A, subgroup 1, after burn-in divided by the total
number of devices submitted for burn-in in that lot shall be used to
determine the percent for the lot.
Linear Technology Corporation reserves the right to test to tighter limits
than those given.
TOTAL DOSE BIAS CIRCUIT
12V
5.1k
2
12Ω
8
5.1k
+
7
3
–
4
12Ω
–12V
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-
tation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
U W
1
RH1011 TDBC
3
RH1011
TYPICAL PERFORMANCE CHARACTERISTICS
Input Offset Voltage
8
6
V
S
=
±15V
R
S
= 0Ω
V
CM
= 0V
300
INPUT BIAS CURRENT (nA)
INPUT OFFSET VOLTAGE (mV)
4
2
0
–2
–4
–6
1
10
100
TOTAL DOSE KRAD (Si)
1000
RH1011 G01
INPUT OFFSET CURRENT (nA)
700
COMMON MODE REJECTION RATIO (dB)
600
VOLTAGE GAIN (V/mV)
500
400
300
200
100
0
1
10
100
TOTAL DOSE KRAD (Si)
1000
RH1011 G04
4
Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900
q
FAX
: (408) 434-0507
q
TELEX
: 499-3977
U W
Input Bias Current
30
V
S
=
±15V
V
CM
= 0V
20
10
0
–10
–20
–30
0
1
10
100
TOTAL DOSE KRAD (Si)
1000
RH1011 G02
Input Offset Current
V
S
=
±15V
V
CM
= 0V
200
100
–40
1
10
100
TOTAL DOSE KRAD (Si)
1000
RH1011 G03
Voltage Gain
130
V
S
=
±15V
R
L
= 1k
V
CM
= 0V
Common Mode Rejection Ratio
120
110
100
90
80
70
60
1
10
100
TOTAL DOSE KRAD (Si)
1000
RH1011 G05
V
S
=
±15V
V
CM
= 14.5V TO 13V
I.D. No. 66-10-0159 Rev. A 0896
LT/HP 0896 REV A 500 • PRINTED IN USA
©
LINEAR TECHNOLOGY CORPORATION 1989
京公网安备 11010802033920号
EEWORLD
