UNISONIC TECHNOLOGIES CO., LTD
2SB772S
MEDIUM POWER LOW
VOLTAGE TRANSISTOR
DESCRIPTION
The UTC
2SB772S
is a medium power low voltage transistor,
designed for audio power amplifier, DC-DC converter and voltage
regulator.
PNP SILICON TRANSISTOR
FEATURES
* High current output up to 3A
* Low saturation voltage
* Complement to 2SD882S
ORDERING INFORMATION
Ordering Number
Lead Free
2SB772SL-x-AA3-R
2SB772SL-x-AB3-R
2SB772SL-x-T92-B
2SB772SL-x-T92-K
2SB772SL-x-T92-R
Halogen Free
2SB772SG-x-AA3-R
2SB772SG-x-AB3-R
2SB772SG-x-T92-B
2SB772SG-x-T92-K
2SB772SG-x-T92-R
Package
SOT-223
SOT-89
TO-92
TO-92
TO-92
Pin Assignment
1
2
3
B
C
E
B
C
E
E
C
B
E
C
B
E
C
B
Packing
Tape Reel
Tape Reel
Tape Box
Bulk
Tape Reel
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QW-R208-002.F
2SB772S
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Collector Current
DC Collector Current
Base Current
SYMBOL
V
CBO
V
CEO
V
EBO
I
CP
I
C
I
B
PNP SILICON TRANSISTOR
RATINGS
UNIT
-40
V
-30
V
-5
V
-7
A
-3
A
-0.6
A
SOT-89
0.5
W
Power Dissipation
SOT-223
P
D
1
W
TO-92
0.5
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C, unless otherwise specified)
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CEO
I
EBO
h
FE1
DC Current Gain(Note 1)
h
FE2
Collector-Emitter Saturation Voltage
V
CE(SAT)
Base-Emitter Saturation Voltage
V
BE(SAT)
Current Gain Bandwidth Product
f
T
Output Capacitance
C
OB
Note 1: Pulse test: P
W
<300μs,
Duty Cycle<2%
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
TEST CONDITIONS
I
C
=-100μA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-100μA, I
C
=0
V
CB
=-30V, I
E
=0
V
CE
=-30V, I
B
=0
V
EB
=-3V, I
C
=0
V
CE
=-2V, I
C
=-20mA
V
CE
=-2V, I
C
=-1A
I
C
=-2A, I
B
=-0.2A
I
C
=-2A, I
B
=-0.2A
V
CE
=-5V, I
C
=-0.1A
V
CB
=-10V, I
E
=0, f=1MHz
MIN
-40
-30
-5
TYP
MAX
UNIT
V
V
V
nA
nA
nA
-1000
-1000
-1000
30
100
200
150
-0.3
-1.0
80
45
400
-0.5
-2.0
V
V
MHz
pF
CLASSIFICATION OF h
FE2
RANK
RANGE
Q
100 ~ 200
P
160 ~ 320
E
200 ~ 400
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www.unisonic.com.tw
2 of 3
QW-R208-002.F
2SB772S
■
TYPICAL CHARACTERICS
DC Current Gain vs. Collector Current
800
V
CE
=-2V
150°C
600
-10
2
400
-10
1
200
25°C
-1
-10
0
-10
3
-10
1
-10
2
Collector Current, Ic (mA)
-10
4
-10
-1
-10
3
PNP SILICON TRANSISTOR
Collector-Emitter Saturation Voltage
vs. Collector Current
I
C
/I
B
=10
150°C
25°C
0
-10
-1
-10
0
-10
1
-10
3
-10
2
Collector Current, Ic (mA)
Collector Current vs.
Collector-Emitter Voltage
-10
4
Base-Emitter Saturation Voltage vs.
-1.2
Collector Current
I
C
/I
B
=10
2.0
1.6
25°C
-0.8
1.2
0.8
-0.4
150°C
0.4
0
-10
-1
-10
0
-10
1
-10
2
-10
3
-10
4
0
0
1
2
3
4
5
Collector Current, Ic (mA)
Collector-Emitter Voltage, V
CE
(V)
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www.unisonic.com.tw
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QW-R208-002.F
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