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2SD637Q

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size261KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
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2SD637Q Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3

2SD637Q Parametric

Parameter NameAttribute value
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)160
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.4 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
Base Number Matches1
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2SD637Q Related Products

2SD637Q 2SD637S 2SD636S 2SD636Q 2SD636R 2SD636
Description Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
package instruction IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3
Contacts 3 3 3 3 3 3
Reach Compliance Code unknow unknow unknow unknow unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V 50 V 25 V 25 V 25 V 25 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 160 290 290 160 210 160
JESD-30 code R-PSIP-T3 R-PSIP-T3 R-PSIP-T3 R-PSIP-T3 R-PSIP-T3 R-PSIP-T3
Number of components 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE
Polarity/channel type NPN NPN NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 150 MHz 150 MHz 150 MHz 150 MHz 150 MHz 150 MHz
Base Number Matches 1 1 1 1 1 1

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