2SD602 / 2SD602A
Elektronische Bauelemente
NPN Plastic-Encapsulate Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURE
Low collector to emitter saturation voltage V
CE(sat)
A
L
3
SOT-23
3
CLASSIFICATION OF h
FE (1)
Product-Rank
Range
Marking Code
Product-Rank
Range
Marking Code
2SD602-Q
85~170
WQ1
2SD602A-Q
85~170
XQ
2SD602-R
120~240
WR1
2SD602A-R
120~240
XR
2SD602-S
170~340
WS1
F
1
Top View
2
C B
1
2
K
E
D
G
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.80
3.04
2.10
2.55
1.20
1.40
0.89
1.15
1.78
2.04
0.30
0.50
H
REF.
G
H
J
K
L
J
Millimeter
Min.
Max.
0.09
0.18
0.45
0.60
0.08
0.177
0.6 REF.
0.89
1.02
2SD602A-S
170~340
XS
PACKAGE INFORMATION
Package
SOT-23
MPQ
3K
LeaderSize
7’ inch
1
Base
Collector
3
2
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
2SD602
2SD602A
2SD602
2SD602A
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
, T
STG
Ratings
30
60
25
50
5
500
200
625
150, -55~150
Unit
V
V
V
mA
mW
° /W
C
°
C
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction to Ambient
Junction, Storage Temperature
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
04-Mar-2011 Rev. B
Page 1 of 3
2SD602 / 2SD602A
Elektronische Bauelemente
NPN Plastic-Encapsulate Transistor
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown
2SD602
Voltage
2SD602A
Collector to Emitter Breakdown 2SD602
Voltage
2SD602A
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
*Pulse test: Pulse width≦350µS, duty cycle≦2.0%
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
*
h
FE (1)
*
h
FE (2)
*
V
CE(sat)
f
T
C
ob
Min.
30
60
25
50
5
-
-
85
40
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
200
-
Max.
-
-
-
-
-
0.1
0.1
340
-
0.6
-
15
Unit
V
V
V
µA
µA
Test Conditions
I
C
=10µA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=20V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=10V, I
C
=150mA
V
CE
=10V, I
C
=500mA
V I
C
=300mA, I
B
=30mA
MHz V
CE
=10V, I
C
=50mA, f=200MHz
pF V
CB
=10V, I
E
=0, f=1MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
04-Mar-2011 Rev. B
Page 2 of 3
2SD602 / 2SD602A
Elektronische Bauelemente
NPN Plastic-Encapsulate Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
04-Mar-2011 Rev. B
Page 3 of 3
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