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SR310HX0

Description
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD,
CategoryDiscrete semiconductor    diode   
File Size203KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

SR310HX0 Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD,

SR310HX0 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOW POWER LOSS
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.85 V
JEDEC-95 codeDO-201AD
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current80 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage100 V
Maximum reverse current100 µA
surface mountNO
technologySCHOTTKY
Terminal formWIRE
Terminal locationAXIAL
SR302 thru SR320
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Low forward voltage drop
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Schottky Barrier Rectifier
MECHANICAL DATA
Case:
DO-201AD
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Weight:
1.1g (approximately)
DO-201AD
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@3A
Maximum reverse current @ rated VR
T
J
=25
T
J
=100℃
T
J
=125
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
0.55
0.5
I
R
dV/dt
R
θJC
R
θJA
T
J
T
STG
- 55 to +125
10
-
5
-
10000
15
50
- 55 to +150
- 55 to +150
0.70
SR
302
20
14
20
SR
303
30
21
30
SR
304
40
28
40
SR
305
50
35
50
SR
306
60
42
60
3
80
0.85
0.1
-
2
V/μs
O
SR
309
90
63
90
SR
310
100
70
100
SR
315
150
105
150
SR
320
200
140
200
UNIT
V
V
V
A
A
0.95
V
mA
Voltage rate of change (Rated V
R
)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
C/W
O
O
C
C
Document Number: D1308007
Version: I13

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