EEWORLDEEWORLDEEWORLD

Part Number

Search

M93C76-TWMN3TG/W

Description
IC,SERIAL EEPROM,512X16/1KX8,CMOS,SOP,8PIN,PLASTIC
Categorystorage    storage   
File Size385KB,27 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance  
Download Datasheet Parametric View All

M93C76-TWMN3TG/W Overview

IC,SERIAL EEPROM,512X16/1KX8,CMOS,SOP,8PIN,PLASTIC

M93C76-TWMN3TG/W Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerSTMicroelectronics
package instructionSOP, SOP8,.25
Reach Compliance Codecompliant
Spare memory width8
Data retention time - minimum40
Durability1000000 Write/Erase Cycles
JESD-30 codeR-PDSO-G8
JESD-609 codee4
memory density8192 bit
Memory IC TypeEEPROM
memory width16
Number of terminals8
word count512 words
character code512
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
organize512X16
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Encapsulate equivalent codeSOP8,.25
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialSERIAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3/5 V
Certification statusNot Qualified
Serial bus typeMICROWIRE
Maximum standby current0.000005 A
Maximum slew rate0.002 mA
surface mountYES
technologyCMOS
Temperature levelAUTOMOTIVE
Terminal surfaceNickel/Palladium/Gold (Ni/Pd/Au)
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
write protectSOFTWARE
M93C86, M93C76, M93C66
M93C56, M93C46, M93C06
16Kbit, 8Kbit, 4Kbit, 2Kbit, 1Kbit and 256bit (8-bit or 16-bit wide)
MICROWIRE Serial Access EEPROM
FEATURES SUMMARY
s
Industry Standard MICROWIRE Bus
s
Figure 1. Packages
Single Supply Voltage:
– 4.5V to 5.5V for M93Cx6
– 2.5V to 5.5V for M93Cx6-W
– 1.8V to 5.5V for M93Cx6-R
8
1
PDIP8 (BN)
s
s
Dual Organization: by Word (x16) or Byte (x8)
Programming Instructions that work on: Byte,
Word or Entire Memory
Self-timed Programming Cycle with Auto-Erase
Ready/Busy Signal During Programming
Speed:
– 1MHz Clock Rate, 10ms Write Time (Current
product, identified by process identification
letter F or M)
– 2MHz Clock Rate, 5ms Write Time (New
Product, identified by process identification
letter W)
s
s
s
8
1
SO8 (MN)
150 mil width
s
s
s
s
Sequential Read Operation
Enhanced ESD/Latch-Up Behaviour
More than 1 Million Erase/Write Cycles
More than 40 Year Data Retention
TSSOP8 (DS)
3x3mm body size
TSSOP8 (DW)
169 mil width
M93C06 IS “NOT FOR NEW DESIGN”
The M93C06 is still in production, but is not recom-
mended for new designs. Please refer to AN1571
on how to replace the M93C06 by the M93C46 in
your application.
March 2003
1/27

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号