BUK-110-50DL,118 datasheet, PDF

BUK-110-50DL,118: Description45A, 50V, 0.035ohm, N-CHANNEL, Si, POWER, MOSFET; CategoryDiscrete semiconductor The transistor; File Size379KB，8 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BUK-110-50DL,118 Overview

45A, 50V, 0.035ohm, N-CHANNEL, Si, POWER, MOSFET

Parameter Name	Attribute value
Maker	NXP
package instruction	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOGIC LEVEL COMPATIBLE, ESD PROTECTION
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	50 V
Maximum drain current (ID)	45 A
Maximum drain-source on-resistance	0.035 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	180 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON

	BUK-110-50DL,118	BUK-110-50DL118
Description	45A, 50V, 0.035ohm, N-CHANNEL, Si, POWER, MOSFET	TRANSISTOR 45 A, 50 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
Maker	NXP	NXP
package instruction	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Other features	LOGIC LEVEL COMPATIBLE, ESD PROTECTION	LOGIC LEVEL COMPATIBLE, ESD PROTECTION
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	50 V	50 V
Maximum drain current (ID)	45 A	45 A
Maximum drain-source on-resistance	0.035 Ω	0.035 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2	R-PSSO-G2
Number of components	1	1
Number of terminals	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	180 A	180 A
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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