Power Bipolar Transistor, 7A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PML, 3 PIN
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Parts packaging code | TO-3PML |
package instruction | FLANGE MOUNT, R-PSFM-T3 |
Contacts | 3 |
Reach Compliance Code | unknow |
Other features | HIGH RELIABILITY |
Shell connection | ISOLATED |
Maximum collector current (IC) | 7 A |
Collector-emitter maximum voltage | 800 V |
Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR |
Minimum DC current gain (hFE) | 5 |
JESD-30 code | R-PSFM-T3 |
JESD-609 code | e0 |
Number of components | 1 |
Number of terminals | 3 |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | NPN |
Maximum power dissipation(Abs) | 3 W |
Certification status | Not Qualified |
surface mount | NO |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | THROUGH-HOLE |
Terminal location | SINGLE |
Maximum time at peak reflow temperature | NOT SPECIFIED |
transistor applications | AMPLIFIER |
Transistor component materials | SILICON |
Base Number Matches | 1 |
2SC4769-3 | 2SC4769-2 | 2SC4769-1 | |
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Description | Power Bipolar Transistor, 7A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PML, 3 PIN | Power Bipolar Transistor, 7A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PML, 3 PIN | Power Bipolar Transistor, 7A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PML, 3 PIN |
Is it Rohs certified? | incompatible | incompatible | incompatible |
Parts packaging code | TO-3PML | TO-3PML | TO-3PML |
package instruction | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
Contacts | 3 | 3 | 3 |
Reach Compliance Code | unknow | unknow | unknow |
Other features | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY |
Shell connection | ISOLATED | ISOLATED | ISOLATED |
Maximum collector current (IC) | 7 A | 7 A | 7 A |
Collector-emitter maximum voltage | 800 V | 800 V | 800 V |
Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR | SINGLE WITH BUILT-IN DIODE AND RESISTOR | SINGLE WITH BUILT-IN DIODE AND RESISTOR |
Minimum DC current gain (hFE) | 5 | 4 | 3 |
JESD-30 code | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
JESD-609 code | e0 | e0 | e0 |
Number of components | 1 | 1 | 1 |
Number of terminals | 3 | 3 | 3 |
Maximum operating temperature | 150 °C | 150 °C | 150 °C |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
Polarity/channel type | NPN | NPN | NPN |
Maximum power dissipation(Abs) | 3 W | 3 W | 3 W |
Certification status | Not Qualified | Not Qualified | Not Qualified |
surface mount | NO | NO | NO |
Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
Terminal location | SINGLE | SINGLE | SINGLE |
Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
transistor applications | AMPLIFIER | AMPLIFIER | AMPLIFIER |
Transistor component materials | SILICON | SILICON | SILICON |
Base Number Matches | 1 | 1 | 1 |