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2SC4769-3

Description
Power Bipolar Transistor, 7A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PML, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size146KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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2SC4769-3 Overview

Power Bipolar Transistor, 7A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PML, 3 PIN

2SC4769-3 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeTO-3PML
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
Other featuresHIGH RELIABILITY
Shell connectionISOLATED
Maximum collector current (IC)7 A
Collector-emitter maximum voltage800 V
ConfigurationSINGLE WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)5
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)3 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1

2SC4769-3 Related Products

2SC4769-3 2SC4769-2 2SC4769-1
Description Power Bipolar Transistor, 7A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PML, 3 PIN Power Bipolar Transistor, 7A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PML, 3 PIN Power Bipolar Transistor, 7A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PML, 3 PIN
Is it Rohs certified? incompatible incompatible incompatible
Parts packaging code TO-3PML TO-3PML TO-3PML
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3 3
Reach Compliance Code unknow unknow unknow
Other features HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
Shell connection ISOLATED ISOLATED ISOLATED
Maximum collector current (IC) 7 A 7 A 7 A
Collector-emitter maximum voltage 800 V 800 V 800 V
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR SINGLE WITH BUILT-IN DIODE AND RESISTOR SINGLE WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE) 5 4 3
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
JESD-609 code e0 e0 e0
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 3 W 3 W 3 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Base Number Matches 1 1 1
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