2SD1263AP datasheet, PDF - EEWORLD Datasheet

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2SD1263AP: DescriptionPower Bipolar Transistor, 0.75A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, SC-67, TO-220F-A1, FULL PACK-3; CategoryDiscrete semiconductor The transistor; File Size78KB，3 Pages; ManufacturerPanasonic; Websitehttp://www.panasonic.co.jp/semicon/e-index.html; Environmental Compliance

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2SD1263AP Overview

Power Bipolar Transistor, 0.75A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, SC-67, TO-220F-A1, FULL PACK-3

2SD1263AP Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Parts packaging code	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	ISOLATED
Maximum collector current (IC)	0.75 A
Collector-emitter maximum voltage	300 V
Configuration	SINGLE
Minimum DC current gain (hFE)	120
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	2 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	30 MHz
Base Number Matches	1

2SD1263AP Related Products

	2SD1263AP	2SD1263AR	2SD1263Q	2SD1263R
Description	Power Bipolar Transistor, 0.75A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, SC-67, TO-220F-A1, FULL PACK-3	Power Bipolar Transistor, 0.75A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, SC-67, TO-220F-A1, FULL PACK-3	Power Bipolar Transistor, 0.75A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, SC-67, TO-220F-A1, FULL PACK-3	Power Bipolar Transistor, 0.75A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, SC-67, TO-220F-A1, FULL PACK-3
Is it Rohs certified?	conform to	conform to	conform to	conform to
Parts packaging code	TO-220AB	TO-220AB	TO-220AB	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Contacts	3	3	3	3
Reach Compliance Code	unknow	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Maximum collector current (IC)	0.75 A	0.75 A	0.75 A	0.75 A
Collector-emitter maximum voltage	300 V	300 V	250 V	250 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	120	40	70	40
JEDEC-95 code	TO-220AB	TO-220AB	TO-220AB	TO-220AB
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN	NPN
Maximum power dissipation(Abs)	2 W	2 W	2 W	2 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	30 MHz	30 MHz	30 MHz	30 MHz
Base Number Matches	1	1	1	1

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