4A, 500V, NPN, Si, POWER TRANSISTOR, TO-218, TO-3PB, 3 PIN
Parameter Name | Attribute value |
Objectid | 1483104096 |
Parts packaging code | TO-218 |
package instruction | FLANGE MOUNT, R-PSFM-T3 |
Contacts | 2 |
Reach Compliance Code | unknown |
Other features | HIGH RELIABILITY |
Maximum collector current (IC) | 4 A |
Collector-emitter maximum voltage | 500 V |
Configuration | SINGLE |
Minimum DC current gain (hFE) | 30 |
JEDEC-95 code | TO-218 |
JESD-30 code | R-PSFM-T3 |
Number of components | 1 |
Number of terminals | 3 |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Polarity/channel type | NPN |
Maximum power consumption environment | 60 W |
Maximum power dissipation(Abs) | 60 W |
Certification status | Not Qualified |
surface mount | NO |
Terminal form | THROUGH-HOLE |
Terminal location | SINGLE |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Nominal transition frequency (fT) | 18 MHz |
2SC3448N | 2SC3448-L | 2SC3448-M | 2SC3448-N | |
---|---|---|---|---|
Description | 4A, 500V, NPN, Si, POWER TRANSISTOR, TO-218, TO-3PB, 3 PIN | Power Bipolar Transistor, 4A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PB, 3 PIN | Power Bipolar Transistor, 4A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PB, 3 PIN | Power Bipolar Transistor, 4A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PB, 3 PIN |
Parts packaging code | TO-218 | TO-3PB | TO-3PB | TO-3PB |
package instruction | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
Contacts | 2 | 3 | 3 | 3 |
Reach Compliance Code | unknown | unknow | unknow | unknow |
Other features | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY |
Maximum collector current (IC) | 4 A | 4 A | 4 A | 4 A |
Collector-emitter maximum voltage | 500 V | 500 V | 500 V | 500 V |
Configuration | SINGLE | SINGLE | SINGLE | SINGLE |
Minimum DC current gain (hFE) | 30 | 15 | 20 | 30 |
JESD-30 code | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
Number of components | 1 | 1 | 1 | 1 |
Number of terminals | 3 | 3 | 3 | 3 |
Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
Polarity/channel type | NPN | NPN | NPN | NPN |
Maximum power dissipation(Abs) | 60 W | 60 W | 60 W | 60 W |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
surface mount | NO | NO | NO | NO |
Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
Terminal location | SINGLE | SINGLE | SINGLE | SINGLE |
transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
Transistor component materials | SILICON | SILICON | SILICON | SILICON |
Nominal transition frequency (fT) | 18 MHz | 18 MHz | 18 MHz | 18 MHz |
Base Number Matches | - | 1 | 1 | 1 |