MOD2023 datasheet, PDF - EEWORLD Datasheet

MOD2023: DescriptionPower Field-Effect Transistor, 20A I(D), 600V, 0.35ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,; CategoryDiscrete semiconductor The transistor; File Size40KB，3 Pages; ManufacturerSENSITRON; Websitehttp://www.sensitron.com/

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MOD2023 Overview

Power Field-Effect Transistor, 20A I(D), 600V, 0.35ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	SENSITRON
package instruction	FLANGE MOUNT, S-CDFM-P12
Reach Compliance Code	compliant
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	600 V
Maximum drain current (ID)	20 A
Maximum drain-source on-resistance	0.35 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	S-CDFM-P12
Number of components	2
Number of terminals	12
Operating mode	ENHANCEMENT MODE
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	SQUARE
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	80 A
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON

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