NDC652PD84Z datasheet, PDF - EEWORLD Datasheet

NDC652PD84Z: DescriptionSmall Signal Field-Effect Transistor, 2.4A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6; CategoryDiscrete semiconductor The transistor; File Size136KB，1 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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NDC652PD84Z Overview

Small Signal Field-Effect Transistor, 2.4A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6

Parameter Name	Attribute value
Maker	Fairchild
Parts packaging code	SOT
package instruction	SMALL OUTLINE, R-PDSO-G6
Contacts	6
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOGIC LEVEL COMPATIBLE
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (ID)	2.4 A
Maximum drain-source on-resistance	0.11 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G6
Number of components	1
Number of terminals	6
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	P-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON

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