The SGA-5289 is a high performance SiGe HBT MMIC Amplifier. A
Darlington configuration featuring 1 micron emitters provides high
F T and excellent thermal perfomance. The heterojunction
increases breakdown voltage and minimizes leakage current
between junctions. Cancellation of emitter junction non-linearities
results in higher suppression of intermodulation products. Only 2
DC-blocking capacitors, a bias resistor and an optional RF choke
are required for operation.
SGA-5289Z
Pb
RoHS Compliant
&
Green
Package
DC-5000 MHz, Cascadable
SiGe HBT MMIC Amplifier
The matte tin finish on Sirenza’s lead-free package utilizes a post
annealing process to mitigate tin whisker formation and is RoHS
Product Features
compliant per EU Directive 2002/95. This package is also manu-
• Now available in Lead Free, RoHS
factured with green molding compounds that contain no antimony
Compliant, & Green Packaging
trioxide nor halogenated fire retardants.
i
Gain & Return Loss vs. Frequency
• High Gain : 12.7 dB at 1950 MHz
20
15
Gain (dB)
10
5
0
0
1
V
D
= 3.5 V, I
D
= 60 mA (Typ.)
0
-10
-20
Return Loss (dB)
• Cascadable 50 Ohm
• Operates From Single Supply
• Low Thermal Resistance Package
GAIN
ORL
Applications
•
•
•
•
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
IRL
-30
-40
2
3
4
Frequency (GHz)
5
6
Symbol
G
Parameter
Small Signal Gain
Units
dB
dB
dB
dBm
dBm
dBm
dBm
MHz
dB
dB
dB
V
mA
°C/W
Frequency
850 MHz
1950 MHz
2400 MHz
850 MHz
1950 MHz
850 MHz
1950 MHz
Min.
12.1
Typ.
13.4
12.7
12.5
15.8
14.4
31.8
28.1
5000
Max.
14.7
P
1dB
OIP
3
Output Pow er at 1dB Compression
Output Third Order Intercept Point
Bandw idth
Determined by Return Loss (>10dB)
IRL
ORL
NF
V
D
I
D
R
TH
, j-l
Input Return Loss
Output Return Loss
Noise Figure
Device Operating Voltage
Device Operating Current
Thermal Resistance (junction to lead)
V
S
= 8 V
R
BIAS
= 75 Ohms
1950 MHz
1950 MHz
1950 MHz
3.1
54
29.2
18.1
3.8
3.5
60
97
3.9
66
Test Conditions:
I
D
= 60 mA Typ.
T
L
= 25ºC
OIP
3
Tone Spacing = 1 MHz, Pout per tone = -5 dBm
Z
S
= Z
L
= 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-100616 Rev D
SGA-5289 DC-5000 GHz Cascadable MMIC Amplifier
Preliminary
Typical RF Performance at Key Operating Frequencies
Symbol
Parameter
Unit
100
Frequency
Frequency (MHz)
Frequency (MHz)(MHz)
500
850
1950
2400
3500
G
OIP
3
P
1dB
IRL
ORL
S
12
NF
Small Signal Gain
Output Third Order Intercept Point
Output Power at 1dB Compression
Input Return Loss
Output Return Loss
Reverse Isolation
Noise Figure
dB
dBm
dBm
dB
dB
dB
dB
13.8
13.6
32.1
16.0
13.4
31.8
15.8
25.1
24.1
18.5
4.2
12.7
28.1
14.4
29.2
18.1
19.5
3.8
12.5
26.3
13.6
21.1
16.7
19.7
5.0
11.9
26.8
29.5
18.3
24.8
26.4
18.3
4.3
14.6
14.5
20.0
V
S
= 8 V
Test Conditions:
V
S
= 8 V
Test Conditions:
R
BIAS
= 75 Ohms
R
BIAS
= 39 Ohms
= 60 mA Typ.
II
D
= 80 mA Typ.
D
T = 25ºC
T
LL
= 25ºC
OIP Tone Spacing = 1 MHz, Pout per tone = -5 dBm
OIP
33
Tone Spacing = 1 MHz, Pout per tone = 0 dBm
Z
S
= Z = 50 Ohms
Z
S
= Z
LL
= 50 Ohms
Noise Figure vs. Frequency
V
D
=3.5 V, I
D
= 60 mA (Typ.)
7
6
5
4
3
Absolute Maximum Ratings
Parameter
Max.
Device Current
(I
D
)
Max.
Device
Voltage (V
D
)
Absolute Limit
1
20
mA
5V
+16 dBm
+150°C
-40°C to +85°C
+150°C
Noise Figure (dB)
Max.
RF Input Power
Max.
Junction Temp
. (T
J
)
Operating Temp
. Range (T
L
)
Max.
Storage Temp
.
T
L
=+25ºC
2
0
0.5
1
1.5
2
Frequency (GHz)
2.5
3
Operation of this device beyond any one of these limits may
cause permanent damage. For reliable continous operation,
the device voltage and current must not exceed the maximum
operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
I
D
V
D
< (T
J
- T
L
) / R
TH
, j-l
OIP
3
vs. Frequency
V
D
= 3.5 V, I
D
= 60 mA (Typ.)
40
35
OIP
3
(dBm)
P
1dB
(dBm)
30
25
20
18
16
14
12
P
1dB
vs. Frequency
V
D
= 3.5 V, I
D
= 60 mA (Typ.)
T
L
=+25ºC
20
0
0.5
1
1.5
2
Frequency (GHz)
2.5
3
T
L
=+25ºC
10
0
0.5
1
1.5
2
Frequency (GHz)
2.5
3
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-100616 Rev. D
SGA-5289 DC-5000 GHz Cascadable MMIC Amplifier
Preliminary
|
S
21
|
vs. Frequency
20
15
S
21
(dB)
S
11
(dB)
|
S
11
|
vs. Frequency
0
-10
-20
-30
V
D
= 3.5 V, I
D
= 60 mA (Typ.)
V
D
= 3.5 V, I
D
= 60 mA (Typ.)
10
5
T
L
0
0
1
2
3
4
Frequency (GHz)
5
+25°C
-40°C
+85°C
T
L
-40
6
0
1
2
3
4
Frequency (GHz)
5
+25°C
-40°C
+85°C
6
|
S
12
|
vs. Frequency
-12
-15
S
12
(dB)
-18
-21
S
22
(dB)
|
S
22
|
vs. Frequency
0
-10
V
D
= 3.5 V, I
D
= 60 mA (Typ.)
V
D
= 3.5 V, I
D
= 60 mA (Typ.)
-20
-30
T
L
-24
0
1
2
3
4
Frequency (GHz)
5
+25°C
-40°C
+85°C
T
L
-40
+25°C
-40°C
+85°C
6
0
1
2
3
4
Frequency (GHz)
5
6
NOTE: Full S-parameter data available at
www.sirenza.com
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
3
http://www.sirenza.com
EDS-100616 Rev. D
SGA-5289 DC-5000 GHz Cascadable MMIC Amplifier
Preliminary
Basic Application Circuit
R
BIAS
1 uF
1000
pF
Application Circuit Element Values
Frequency (Mhz)
Reference
Designator
500
850
1950
2400
3500
V
S
C
D
L
C
C
B
C
D
L
C
220 pF
100 pF
68 nH
100 pF
68 pF
33 nH
68 pF
22 pF
22 nH
56 pF
22 pF
18 nH
39 pF
15 pF
15 nH
RF in
C
B
4
1
SGA-5289
3
2
C
B
RF out
Recommended Bias Resistor Values for I
D
=60mA
R
BIAS
=( V
S
-V
D
) / I
D
Supply Voltage(V
S
)
R
BIAS
6V
43
8V
75
10 V
110
12 V
150
V
S
R
BIAS
Note: R
BIAS
provides DC bias stability over temperature.
1 uF
1000 pF
Mounting Instructions
1. Solder the copper pad on the backside of the
device package to the ground plane.
2. Use a large ground pad area with many plated
through-holes as shown.
3. We recommend 1 or 2 ounce copper. Measurement
for this data sheet were made on a 31 mil thick FR-4
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