8KX8 NON-VOLATILE SRAM, 25ns, CDIP28, 0.300 INCH, CERAMIC, DIP-28
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | Cypress Semiconductor |
Parts packaging code | DIP |
package instruction | DIP, DIP28,.3 |
Contacts | 28 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Maximum access time | 25 ns |
Other features | EEPROM HARDWARE STORE/RECALL; RETENTION/ENDURANCE = 10 YEARS/100000 CYCLES |
JESD-30 code | R-CDIP-T28 |
JESD-609 code | e0 |
length | 35.56 mm |
memory density | 65536 bit |
Memory IC Type | NON-VOLATILE SRAM |
memory width | 8 |
Number of functions | 1 |
Number of ports | 1 |
Number of terminals | 28 |
word count | 8192 words |
character code | 8000 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 70 °C |
Minimum operating temperature | |
organize | 8KX8 |
Output characteristics | 3-STATE |
Exportable | YES |
Package body material | CERAMIC, METAL-SEALED COFIRED |
encapsulated code | DIP |
Encapsulate equivalent code | DIP28,.3 |
Package shape | RECTANGULAR |
Package form | IN-LINE |
Parallel/Serial | PARALLEL |
Peak Reflow Temperature (Celsius) | 240 |
power supply | 5 V |
Certification status | Not Qualified |
Maximum seat height | 4.2418 mm |
Maximum standby current | 0.001 A |
Maximum slew rate | 0.085 mA |
Maximum supply voltage (Vsup) | 5.5 V |
Minimum supply voltage (Vsup) | 4.5 V |
Nominal supply voltage (Vsup) | 5 V |
surface mount | NO |
technology | CMOS |
Temperature level | COMMERCIAL |
Terminal surface | Tin/Lead (Sn85Pb15) |
Terminal form | THROUGH-HOLE |
Terminal pitch | 2.54 mm |
Terminal location | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED |
width | 7.62 mm |