Power Field-Effect Transistor, 140A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Parameter Name | Attribute value |
Maker | ADPOW |
package instruction | FLANGE MOUNT, R-PUFM-D4 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Avalanche Energy Efficiency Rating (Eas) | 1500 mJ |
Shell connection | ISOLATED |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 100 V |
Maximum drain current (Abs) (ID) | 140 A |
Maximum drain current (ID) | 140 A |
Maximum drain-source on-resistance | 0.015 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
Maximum feedback capacitance (Crss) | 2250 pF |
JESD-30 code | R-PUFM-D4 |
Number of components | 1 |
Number of terminals | 4 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Polarity/channel type | N-CHANNEL |
Maximum power consumption environment | 520 W |
Maximum power dissipation(Abs) | 520 W |
Maximum pulsed drain current (IDM) | 560 A |
Certification status | Not Qualified |
surface mount | NO |
Terminal form | SOLDER LUG |
Terminal location | UPPER |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Maximum off time (toff) | 290 ns |
Maximum opening time (tons) | 150 ns |