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APT10M15JNR

Description
Power Field-Effect Transistor, 140A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size358KB,4 Pages
ManufacturerADPOW
Websitehttp://www.advancedpower.com/
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APT10M15JNR Overview

Power Field-Effect Transistor, 140A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

APT10M15JNR Parametric

Parameter NameAttribute value
MakerADPOW
package instructionFLANGE MOUNT, R-PUFM-D4
Reach Compliance Codeunknown
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)1500 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (Abs) (ID)140 A
Maximum drain current (ID)140 A
Maximum drain-source on-resistance0.015 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)2250 pF
JESD-30 codeR-PUFM-D4
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power consumption environment520 W
Maximum power dissipation(Abs)520 W
Maximum pulsed drain current (IDM)560 A
Certification statusNot Qualified
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)290 ns
Maximum opening time (tons)150 ns
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