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BCY58VIII

Description
TRANSISTOR,BJT,NPN,32V V(BR)CEO,200MA I(C),TO-206AA
CategoryDiscrete semiconductor    The transistor   
File Size210KB,4 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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BCY58VIII Overview

TRANSISTOR,BJT,NPN,32V V(BR)CEO,200MA I(C),TO-206AA

BCY58VIII Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSTMicroelectronics
package instruction,
Reach Compliance Codenot_compliant
Maximum collector current (IC)0.2 A
ConfigurationSingle
JESD-609 codee0
Maximum operating temperature175 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.6 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)125 MHz

BCY58VIII Related Products

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Description TRANSISTOR,BJT,NPN,32V V(BR)CEO,200MA I(C),TO-206AA TRANSISTOR,BJT,NPN,32V V(BR)CEO,200MA I(C),TO-206AA TRANSISTOR,BJT,NPN,45V V(BR)CEO,200MA I(C),TO-206AA TRANSISTOR,BJT,NPN,32V V(BR)CEO,200MA I(C),TO-206AA TRANSISTOR,BJT,NPN,32V V(BR)CEO,200MA I(C),TO-206AA
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible
Reach Compliance Code not_compliant not_compliant not_compliant not_compliant not_compliant
Maximum collector current (IC) 0.2 A 0.2 A 0.2 A 0.2 A 0.2 A
Configuration Single Single Single Single Single
JESD-609 code e0 e0 e0 e0 e0
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C 175 °C
Polarity/channel type NPN NPN NPN NPN NPN
Maximum power dissipation(Abs) 0.6 W 0.6 W 0.6 W 0.6 W 0.6 W
surface mount NO NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Nominal transition frequency (fT) 125 MHz 125 MHz 125 MHz 125 MHz 125 MHz
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