2SB1078(K)
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
–120
–7
—
—
1000
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
—
1.5
2.0
0.5
Max
—
—
–100
–10
20000
–1.5
–3.0
–2.0
–3.5
—
—
—
V
V
V
V
µs
µs
µs
Unit
V
V
µA
µA
Test conditions
I
C
= –25 mA, R
BE
=
∞
I
E
= –50 mA, I
C
= 0
V
CB
= –120 V, I
E
= 0
V
CE
= –100 V, R
BE
=
∞
V
CE
= –3 V, I
C
= –4 A*
1
Collector to emitter breakdown V
(BR)CEO
voltage
Emitter to base breakdown
voltage
Collector cutoff current
V
(BR)EBO
I
CBO
I
CEO
DC current transfer ratio
Collector to emitter saturation
voltage
h
FE
V
CE(sat)1
V
CE(sat)2
Base to emitter saturation
voltage
V
BE(sat)1
V
BE(sat)2
Turn on time
Storage time
Fall time
Note:
1. Pulse test
t
on
t
stg
t
f
I
C
= –4 A, I
B
= –8 mA*
1
I
C
= –8 A, I
B
= –80 mA*
I
C
= –4 A, I
B
= –8 mA*
1
1
I
C
= –8 A, I
B
= –80 mA*
1
I
C
= –4 A, I
B1
= –I
B2
= –8 mA
Maximum Collector Dissipation Curve
60
Collector power dissipation Pc (W)
–30
i
C (peak)
Collector Current I
C
(A)
–10
I
C (max)
–3
–1.0
–0.3
–0.1
Area of Safe Operation
1
µs
100
µs
s
1m
=
PW
(
DC
40
m
10
20
T
C
Ta = 25°C
1 Shot pulse
s
)
0
50
100
Case Temperature T
C
(°C)
150
–0.03
–10 –30 –100 –300 –1,000
–1.0 –3
Collector to emitter Voltage V
CE
(V)
=2
5
°
C
2
2SB1078(K)
Typical Output Characteristics
–10
30,000
T
C
= 25°C
–2.5 mA
–3 mA
–6
–1 mA
DC Current Transfer Ratio vs.
Collector Current
V
CE
= –3 V
Pulse
=
Ta
75
°
C
–1.5 mA
DC current transfer ratio h
FE
–2 mA
10,000
3,000
1,000
300
100
Collector Current I
C
(A)
–8
C
25
°
–25°C
–4
I
B
= –0.5 mA
–2
0
–1
–2
–3
–4
–5
Collector to emitter Voltage V
CE
(V)
30
–0.1 –0.2
–0.5 –1.0 –2
–5
Collector current I
C
(A)
–10
Saturation Voltage vs. Collector Current
Collector to emitter saturation voltage
V
CE (sat)
(V)
Base to emitter saturation voltage
V
BE (sat)
(V)
–10
–5
500
–2
V
BE (sat)
–1.0
–0.5
V
CE (sat)
l
C
/l
B
= 200
500
200
Switching time t (µs)
10
5
Switching Time vs. Collector Current
t
stg
2
t
on
1.0
0.5
Ta = 25°C
V
CC
= –30 V
I
C
= 500 I
B1
= –500 I
B2
–0.5 –1.0 –2
–5
Collector current I
C
(A)
–10
t
f
–0.2
–0.1
–0.1 –0.2
–0.5 –1.0 –2
–5
Collector current I
C
(A)
Ta = 25°C
Pulse
–10
0.2
0.1
–0.1 –0.2
3
2SB1078(K)
Notice
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or
part of this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or
any other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the examples
described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third
party or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
Hitachi, Ltd.
Semiconductor & IC Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan
Tel: Tokyo (03) 3270-2111
Fax: (03) 3270-5109
For further information write to:
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Semiconductor & IC Div.
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USA
Tel: 415-589-8300
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.
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