FIFO, 1KX9, 65ns, Asynchronous, CMOS, CDIP28, 0.300 INCH, SIDE BRAZED, THIN, CERAMIC, DIP-28
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
Maker | IDT (Integrated Device Technology) |
Parts packaging code | DIP |
package instruction | 0.300 INCH, SIDE BRAZED, THIN, CERAMIC, DIP-28 |
Contacts | 28 |
Reach Compliance Code | not_compliant |
ECCN code | EAR99 |
Maximum access time | 65 ns |
Other features | RETRANSMIT |
period time | 80 ns |
JESD-30 code | R-CDIP-T28 |
JESD-609 code | e0 |
memory density | 9216 bit |
Memory IC Type | OTHER FIFO |
memory width | 9 |
Number of functions | 1 |
Number of terminals | 28 |
word count | 1024 words |
character code | 1000 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 125 °C |
Minimum operating temperature | -55 °C |
organize | 1KX9 |
Output characteristics | 3-STATE |
Exportable | NO |
Package body material | CERAMIC, METAL-SEALED COFIRED |
encapsulated code | DIP |
Encapsulate equivalent code | DIP28,.3 |
Package shape | RECTANGULAR |
Package form | IN-LINE |
Parallel/Serial | PARALLEL |
Peak Reflow Temperature (Celsius) | 225 |
power supply | 5 V |
Certification status | Not Qualified |
Filter level | 38535Q/M;38534H;883B |
Maximum slew rate | 0.1 mA |
Maximum supply voltage (Vsup) | 5.5 V |
Minimum supply voltage (Vsup) | 4.5 V |
Nominal supply voltage (Vsup) | 5 V |
surface mount | NO |
technology | CMOS |
Temperature level | MILITARY |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | THROUGH-HOLE |
Terminal pitch | 2.54 mm |
Terminal location | DUAL |
Maximum time at peak reflow temperature | 20 |