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IDT7202LA65TCB

Description
FIFO, 1KX9, 65ns, Asynchronous, CMOS, CDIP28, 0.300 INCH, SIDE BRAZED, THIN, CERAMIC, DIP-28
Categorystorage    storage   
File Size440KB,13 Pages
ManufacturerIDT (Integrated Device Technology)
Download Datasheet Parametric View All

IDT7202LA65TCB Overview

FIFO, 1KX9, 65ns, Asynchronous, CMOS, CDIP28, 0.300 INCH, SIDE BRAZED, THIN, CERAMIC, DIP-28

IDT7202LA65TCB Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerIDT (Integrated Device Technology)
Parts packaging codeDIP
package instruction0.300 INCH, SIDE BRAZED, THIN, CERAMIC, DIP-28
Contacts28
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum access time65 ns
Other featuresRETRANSMIT
period time80 ns
JESD-30 codeR-CDIP-T28
JESD-609 codee0
memory density9216 bit
Memory IC TypeOTHER FIFO
memory width9
Number of functions1
Number of terminals28
word count1024 words
character code1000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize1KX9
Output characteristics3-STATE
ExportableNO
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeDIP
Encapsulate equivalent codeDIP28,.3
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)225
power supply5 V
Certification statusNot Qualified
Filter level38535Q/M;38534H;883B
Maximum slew rate0.1 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperature20
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