Dear customers,
About the change in the name such as "Oki Electric Industry Co. Ltd." and
"OKI" in documents to OKI Semiconductor Co., Ltd.
The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI
Semiconductor Co., Ltd. on October 1, 2008.
Therefore, please accept that although
the terms and marks of "Oki Electric Industry Co., Ltd.", “Oki Electric”, and "OKI"
remain in the documents, they all have been changed to "OKI Semiconductor Co., Ltd.".
It is a change of the company name, the company trademark, and the logo, etc. , and
NOT a content change in documents.
October 1, 2008
OKI Semiconductor Co., Ltd.
550-1 Higashiasakawa-cho, Hachioji-shi, Tokyo 193-8550, Japan
http://www.okisemi.com/en/
E2G0031-17-41
¡ Semiconductor
MSM519205
¡ Semiconductor
This version: Jan. 1998
MSM519205
Previous version: May 1997
4,194,304-Word
¥
2-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
DESCRIPTION
The MSM519205 is a 4,194,304-word
¥
2-bit dynamic RAM fabricated in Oki's silicon-gate CMOS
technology. The MSM519205 achieves high integration, high-speed operation, and low-power
consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer
metal CMOS process. The MSM519205 is available in a 26/24-pin plastic SOJ or 26/24-pin plastic
TSOP.
FEATURES
• 4,194,304-word
¥
2-bit configuration
• Single 5 V power supply,
±10%
tolerance
• Input
: TTL compatible, low input capacitance
• Output : TTL compatible, 3-state
• Refresh : 2048 cycles/32 ms
• Fast page mode with EDO, read modify write capability
•
CAS
before
RAS
refresh, hidden refresh,
RAS-only
refresh capability
• Multi-bit test mode capability
• Package options:
26/24-pin 300 mil plastic SOJ (SOJ26/24-P-300-1.27) (Product : MSM519205-xxSJ)
26/24-pin 300 mil plastic TSOP (TSOPII26/24-P-300-1.27-K) (Product : MSM519205-xxTS-K)
xx indicates speed rank.
PRODUCT FAMILY
Family
MSM519205-60
MSM519205-70
MSM519205-80
Access Time (Max.)
t
RAC
t
AA
t
CAC
t
OEA
60 ns 30 ns 15 ns 15 ns
70 ns 35 ns 20 ns 20 ns
80 ns 40 ns 20 ns 20 ns
Cycle Time
Power Dissipation
(Min.)
Operating (Max.) Standby (Max.)
110 ns
130 ns
150 ns
440 mW
413 mW
385 mW
5.5 mW
1/18
¡ Semiconductor
PIN CONFIGURATION (TOP VIEW)
V
CC
1
26 V
SS
25 NC
V
CC
1
DQ1 2
WE
4
NC 6
DQ1 2
WE
4
NC 6
DQ2 3
24
CAS1
23
CAS2
22
OE
21 A9
DQ2 3
RAS
5
RAS
5
A10 8
A0 9
19 A8
A10 8
18 A7
17 A6
16 A5
15 A4
14 V
SS
A0 9
A1 10
A2 11
A3 12
V
CC
13
A1 10
A2 11
A3 12
V
CC
13
26/24-Pin Plastic SOJ
Pin Name
A0 - A10
RAS
CAS1, CAS2
DQ1, DQ2
OE
WE
V
CC
V
SS
NC
Function
Address Input
Row Address Strobe
Column Address Strobe
Data Input/Data Output
Output Enable
Write Enable
Power Supply (5 V)
Ground (0 V)
No Connection
MSM519205
26 V
SS
25 NC
24
CAS1
23
CAS2
22
OE
21 A9
19 A8
18 A7
17 A6
16 A5
15 A4
14 V
SS
26/24-Pin Plastic TSOP
(K Type)
Note :
The same power supply voltage must be provided to every V
CC
pin, and the same GND
voltage level must be provided to every V
SS
pin.
2/18
¡ Semiconductor
MSM519205
BLOCK DIAGRAM
Timing
Generator
Timing
Generator
RAS
CAS1
CAS2
11
Column
Address
Buffers
Internal
Address
Counter
11
Column
Decoders
Write
Clock
Generator
WE
OE
2
Output
Buffers
2
2
A0 - A10
Refresh
Control Clock
Sense
Amplifiers
2
I/O
Selector
2
2
DQ1, DQ2
Input
Buffers
2
11
Row
Address
Buffers
11
Row
De-
coders
Word
Drivers
Memory
Cells
V
CC
On Chip
V
BB
Generator
V
SS
FUNCTION TABLE
Input Pin
RAS
H
L
L
L
L
L
L
L
L
CAS1
*
H
L
H
L
L
H
L
L
CAS2
*
H
H
L
L
H
L
L
L
WE
*
*
H
H
H
L
L
L
H
OE
*
*
L
L
L
H
H
H
H
DQ1
High-Z
High-Z
D
OUT
High-Z
D
OUT
D
IN
Don't Care
D
IN
High-Z
DQ Pin
DQ2
High-Z
High-Z
High-Z
D
OUT
D
OUT
Don't Care
D
IN
D
IN
High-Z
Function Mode
Standby
Refresh
DQ1 Read
DQ2 Read
DQ1, DQ2 Read
DQ1 Write
DQ2 Write
DQ1, DQ2 Write
—
*: "H" or "L"
3/18
¡ Semiconductor
MSM519205
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Voltage on Any Pin Relative to V
SS
Short Circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V
T
I
OS
P
D
*
T
opr
T
stg
Rating
–1.0 to 7.0
50
1
0 to 70
–55 to 150
Unit
V
mA
W
°C
°C
*: Ta = 25°C
Recommended Operating Conditions
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min.
4.5
0
2.4
–1.0
Typ.
5.0
0
—
—
Max.
5.5
0
6.5
0.8
(Ta = 0°C to 70°C)
Unit
V
V
V
V
Capacitance
Parameter
Input Capacitance (A0 - A10)
Input Capacitance
(RAS,
CAS1, CAS2, WE, OE)
Output Capacitance (DQ1, DQ2)
Symbol
C
IN1
C
IN2
C
I/O
Typ.
—
—
—
(V
CC
= 5 V ±10%, Ta = 25°C, f = 1 MHz)
Max.
6
7
10
Unit
pF
pF
pF
4/18