APM4476K
N-Channel Enhancement Mode MOSFET
Features
•
40V/7.5A,
R
DS(ON)
= 15mΩ (typ.) @ V
GS
= 10V
R
DS(ON)
= 22mΩ (typ.) @ V
GS
= 4.5V
Super High Dense Cell Design
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
D
D
D
D
•
•
•
S
S
S
G
Top View of SOP- 8
(5, 6, 7, 8)
D D DD
Applications
•
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems.
(4)
G
(1 , 2 , 3)
S S S
N-Channel MOSFET
Ordering and Marking Information
APM4476
Assembly Material
Handling Code
Temperature Range
Package Code
APM4476 K:
APM4476
XXXXX
Package Code
K : SOP-8
Operating Junction Temperature Range
C : -55 to 150
o
C
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina-
tion finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
©
ANPEC Electronics Corp.
Rev. A.2 - Dec., 2009
1
www.anpec.com.tw
APM4476K
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
*
I
DM
*
I
S
*
T
J
T
STG
P
D
*
R
θJA
*
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
300µs Pulsed Drain Current
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
2
(T
A
= 25°C unless otherwise noted)
Rating
40
±20
V
GS
=10V
7.5
30
3
150
-55 to 150
T
A
=25°C
T
A
=100°C
2
0.8
62.5
Unit
V
A
A
°C
W
°C/W
Parameter
Note: *Surface Mounted on 1in
pad area, t
≤
10sec.
Electrical Characteristics
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
a
(T
A
= 25°C unless otherwise noted)
APM4476K
Min.
40
-
-
1.3
-
-
-
-
-
-
Typ.
-
-
-
2
-
15
22
0.8
21
15
Max.
-
1
30
2.5
±10
20
32
1.1
-
-
Parameter
Test Conditions
Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
V
GS
=0V, I
DS
=250µA
V
DS
=32V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±16V, V
DS
=0V
V
GS
=10V, I
DS
=7.5A
V
GS
=4.5V, I
DS
=6A
I
SD
=3A, V
GS
=0V
I
SD
=7.5A, dl
SD
/dt=100A/µs
V
µA
V
µA
mΩ
Diode Characteristics
V
SD
t
rr
q
rr
a
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
ns
nC
Copyright
©
ANPEC Electronics Corp.
Rev. A.2 - Dec., 2009
2
www.anpec.com.tw
APM4476K
Electrical Characteristics (Cont.)
Symbol
Parameter
b
(T
A
= 25°C unless otherwise noted)
Test Conditions
APM4476K
Min.
-
-
-
-
-
-
-
-
Typ.
4
1050
130
100
10
10
37
11
22.3
3.5
3.4
Max.
-
-
-
-
19
19
68
21
31
-
-
Unit
Dynamic Characteristics
R
G
C
iss
C
oss
C
rss
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
b
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=20V,
Frequency=1.0MHz
V
DD
=20V, R
L
=20Ω,
I
DS
=1A, V
GEN
=10V,
R
G
=6Ω
Ω
pF
ns
Gate Charge Characteristics
Total Gate Charge
-
V
DS
=20V, V
GS
=10V,
I
DS
=7.5A
-
-
Gate-Source Charge
Gate-Drain Charge
nC
Note a : Pulse test ; pulse width≤300
µ
s, duty cycle≤2%.
Note b : Guaranteed by design, not subject to production testing.
Copyright
©
ANPEC Electronics Corp.
Rev. A.2 - Dec., 2009
3
www.anpec.com.tw
APM4476K
Typical Operating Characteristics
Power Dissipation
2.5
10
Drain Current
2.0
8
P
tot
- Power (W)
1.5
I
D
- Drain Current (A)
o
6
1.0
4
0.5
2
o
0.0
T
A
=25 C
0
20
40
60
80 100 120 140 160
0
T
A
=25 C,V
G
=10V
0
20
40
60
80 100 120 140 160
T
j
- Junction Temperature (°C)
T
j
- Junction Temperature (°C)
Safe Operation Area
100
2
1
Thermal Transient Impedance
Duty = 0.5
0.2
10
Lim
it
Normalized Effective Transient
I
D
- Drain Current (A)
Rd
s(o
n)
0.1
300
µ
s
0.1
0.02
0.01
0.05
1
1ms
10ms
100ms
1s
DC
T
C
=25 C
o
0.01
Single Pulse
0.1
0.01
0.01
0.1
1
10
100
1E-3
1E-4
Mounted on 1in pad
o
R
θ
JA
: 62.5 C/W
2
1E-3
0.01
0.1
1
10
60
V
DS
- Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
Copyright
©
ANPEC Electronics Corp.
Rev. A.2 - Dec., 2009
4
www.anpec.com.tw
APM4476K
Typical Operating Characteristics (Cont.)
Output Characteristics
30
V
GS
=4,4.5,5,6,7,8,9,10V
32
Drain-Source On Resistance
R
DS(ON)
- On - Resistance (mΩ)
25
28
V
GS
=4.5V
I
D
- Drain Current (A)
20
24
15
3.5V
10
20
16
V
GS
=10V
5
3V
0
0.0
12
8
0.5
1.0
1.5
2.0
2.5
3.0
0
5
10
15
20
25
30
V
DS
- Drain - Source Voltage (V)
I
D
- Drain Current (A)
Drain-Source On Resistance
40
I
D
=7.5A
Gate Threshold Voltage
1.6
I
DS
=250
µ
A
1.4
R
DS(ON)
- On - Resistance (mΩ)
Normalized Threshold Voltage
2
3
4
5
6
7
8
9
10
35
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
30
25
20
15
10
0
25
50
75 100 125 150
V
GS
- Gate - Source Voltage (V)
T
j
- Junction Temperature (°C)
Copyright
©
ANPEC Electronics Corp.
Rev. A.2 - Dec., 2009
5
www.anpec.com.tw
京公网安备 11010802033920号
EEWORLD
