NTLJD4116N
Power MOSFET
Features
30 V, 4.6 A,
mCoolt
Dual N−Channel,
2x2 mm WDFN Package
•
WDFN Package Provides Exposed Drain Pad for Excellent Thermal
•
•
•
•
•
Conduction
2x2 mm Footprint Same as SC−88
Lowest R
DS(on)
Solution in 2x2 mm Package
1.5 V R
DS(on)
Rating for Operation at Low Voltage Gate Drive Logic
Level
Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
This is a Pb−Free Device
V
(BR)DSS
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R
DS(on)
MAX
70 mW @ 4.5 V
30 V
90 mW @ 2.5 V
125 mW @ 1.8 V
250 mW @ 1.5 V
D
4.6 A
I
D
MAX
(Note 1)
Applications
•
DC−DC Converters (Buck and Boost Circuits)
•
Low Side Load Switch
•
Optimized for Battery and Load Management Applications in
Portable Equipment such as, Cell Phones, PDA’s, Media Players, etc.
•
Level Shift for High Side Load Switch
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
t
≤
5s
Power Dissipation
(Note 1)
Steady
State
t
≤
5s
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Pulsed Drain Current
T
A
= 25°C
Steady
State
T
A
= 85°C
T
A
= 25°C
t
p
= 10
ms
P
D
I
DM
T
J
, T
STG
I
S
T
L
I
D
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
P
D
T
A
= 25°C
2.3
2.5
1.8
0.71
20
−55 to
150
2.0
260
W
A
°C
A
°C
G1
D2
A
Symbol
V
DSS
V
GS
I
D
Value
30
±8.0
3.7
2.7
4.6
1.5
W
Unit
V
V
A
1
G
S
N−CHANNEL MOSFET
MARKING
DIAGRAM
WDFN6
CASE 506AN
1
2 JFMG
G
3
6
5
4
JF = Specific Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
D1
S1
1
2
D2
3
4
S2
6
5
D1
G2
Operating Junction and Storage Temperature
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
(Top View)
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size
of 30 mm
2
, 2 oz Cu.
ORDERING INFORMATION
Device
NTLJD4116NT1G
Package
WDFN6
(Pb−Free)
Shipping
†
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2006
1
May, 2006 − Rev. 4
Publication Order Number:
NTLJD4116N/D
NTLJD4116N
THERMAL RESISTANCE RATINGS
Parameter
SINGLE OPERATION (SELF−HEATED)
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – Steady State Min Pad (Note 4)
Junction−to−Ambient – t
≤
5 s (Note 3)
DUAL OPERATION (EQUALLY HEATED)
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – Steady State Min Pad (Note 4)
Junction−to−Ambient – t
≤
5 s (Note 3)
R
qJA
R
qJA
R
qJA
58
133
40
°C/W
R
qJA
R
qJA
R
qJA
83
177
54
°C/W
Symbol
Max
Unit
3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface Mounted on FR4 Board using the minimum recommended pad size (30 mm
2
, 2 oz Cu).
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2
NTLJD4116N
MOSFET ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 5)
Gate Threshold Voltage
Negative Gate Threshold
Temperature Coefficient
Drain−to−Source On−Resistance
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
V
GS
= 4.5, I
D
= 2.0 A
V
GS
= 2.5, I
D
= 2.0 A
V
GS
= 1.8, I
D
= 1.8 A
V
GS
= 1.5, I
D
= 1.5 A
Forward Transconductance
g
FS
V
DS
= 5.0 V, I
D
= 2.0 A
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Resistance
SWITCHING CHARACTERISTICS
(Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 4.5 V, V
DD
= 15 V,
I
D
= 2.0 A, R
G
= 2.0
W
4.8
11.8
14.2
1.7
ns
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
R
G
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 2.0 A
427
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 15 V
51
32
5.4
0.5
0.8
1.24
0.37
W
6.5
nC
pF
V
GS
= V
DS
, I
D
= 250
mA
0.4
0.7
2.8
47
56
88
133
4.5
70
90
125
250
S
1.0
V
mV/°C
mW
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
GSS
V
GS
= 0 V, I
D
= 250
mA
I
D
= 250
mA,
Ref to 25°C
T
J
= 25°C
T
J
= 85°C
30
18.1
1.0
10
100
nA
V
mV/°C
mA
Symbol
Test Conditions
Min
Typ
Max
Unit
V
DS
= 24 V, V
GS
= 0 V
V
DS
= 0 V, V
GS
=
±8.0
V
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Recovery Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Time
V
SD
t
RR
t
a
t
b
Q
RR
V
GS
= 0 V, d
ISD
/d
t
= 100 A/ms,
I
S
= 2.0 A
V
GS
= 0 V, IS = 2.0 A
T
J
= 25°C
T
J
= 125°C
0.78
0.62
10.5
7.6
2.9
5.0
nC
ns
1.2
V
5. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2%.
6. Switching characteristics are independent of operating junction temperatures.
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3
NTLJD4116N
TYPICAL PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
5
I
D
, DRAIN CURRENT (AMPS)
V
GS
= 1.7 V to 8 V
T
J
= 25°C
I
D
, DRAIN CURRENT (AMPS)
1.6 V
4
1.5 V
6
V
DS
≥
10 V
4
3
2
1.4 V
1.3 V
1.2 V
2
T
J
= 25°C
1
0
0
1
2
3
4
T
J
= 100°C
0
T
J
= −55°C
0
0.5
1
1.5
2
2.5
3
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
0.07
V
GS
= 4.5 V
0.06
T
J
= 100°C
0.14
0.13
0.12
0.11
0.1
0.09
0.08
0.07
0.06
0.05
0.04
1
2
V
GS
= 4.5 V
3
4
5
V
GS
= 2.5 V
V
GS
= 1.8 V
T
J
= 25°C
0.05
T
J
= 25°C
0.04
T
J
= −55°C
0.03
0.02
1.0
1.5
2.0
2.5
I
D
, DRAIN CURRENT (AMPS)
I
D
, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
100,000
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
1.6
I
D
= 2 A
V
GS
= 4.5 V
1.4
V
GS
= 0 V
10,000
T
J
= 150°C
1000
T
J
= 100°C
100
1.2
1.0
0.8
0.6
−50
I
DSS
, LEAKAGE (nA)
−25
0
25
50
75
100
125
150
10
2
4
6
8 10 12 14 16 18 20 22 24 26 28 30
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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NTLJD4116N
TYPICAL PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
V
DS
= 0 V V
GS
= 0 V
5
QT
4
V
DS
V
GS
18
15
VDS , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1000
C, CAPACITANCE (pF)
800
600
C
iss
400
200
0
5
V
GS
0
V
DS
5
10
15
20
C
rss
C
oss
T
J
= 25°C
12
3
9
2
Q
GS
Q
GD
6
1
0
0
1
I
D
= 2.0 A
T
J
= 25°C
2
3
4
5
Q
G
, TOTAL GATE CHARGE (nC)
6
3
0
25
30
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
1000
IS, SOURCE CURRENT (AMPS)
V
DD
= 15 V
I
D
= 2.0 A
V
GS
= 4.5 V
t, TIME (ns)
100
t
d(off)
t
f
t
r
10
t
d(on)
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
3
V
GS
= 0 V
T
J
= 150°C
2
T
J
= 25°C
T
J
= 125°C
1
1
1
10
R
G
, GATE RESISTANCE (OHMS)
100
0
0.3
0.6
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
0.9
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
100
−I
D
, DRAIN CURRENT (AMPS)
T
C
= 25°C
T
J
= 150°C
SINGLE PULSE
Figure 10. Diode Forward Voltage versus Current
10
10
ms
100
ms
1 ms
1
10 ms
*See Note 2 on Page 1
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
dc
0.1
0.01
1
10
100
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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