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MMST3906

Description
TRANSISTOR PNP GP 40V .2A SOT323
Categorysemiconductor    Discrete semiconductor   
File Size76KB,3 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
Download Datasheet View All

MMST3906 Overview

TRANSISTOR PNP GP 40V .2A SOT323

MCC
TM
Micro Commercial Components
  omponents
20736 Marilla
Street Chatsworth

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MMST3906
Features
Epitaxial Planar Die Construction
Complementary NPN Type available (MMST3904)
Ultra-small surface mount package
Marking : K5N
PNP Small Signal
Transistors
SOT-323
A
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
and MSL Rating 1
Maxim um Ratings
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
C
T
J
T
STG
Symbol
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
(1)
Power dissipation
(1)
Junction Temperature
Storage Temperature
Parameter
(2)
D
C
Rating
40
40
5.0
200
200
-55 to +150
-55 to +150
Min
40
40
5.0
---
---
Max
---
---
---
50
50
Unit
V
V
V
mA
mW
O
C
O
C
G
B
C
B
F
E
E
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Units
Vdc
Vdc
Vdc
nAdc
nAdc
H
J
K
DIMENSIONS
INCHES
MIN
MAX
.071
.087
.045
.053
.079
.087
.026 Nominal
.047
.055
.012
.016
.000
.004
.035
.039
.004
.010
.012
.016
MM
MIN
MAX
1.80
2.20
1.15
1.35
2.00
2.20
0.65Nominal
1.20
1.40
.30
.40
.000
.100
.90
1.00
.100
.250
.30
.40
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEX
I
BL
Collector-Emitter Breakdown Voltage
(I
C
=1.0mAdc, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=10uAdc, I
E
=0)
Collector-Emitter Breakdown Voltage
(I
E
=10uAdc, I
C
=0)
Collector-Base Cutoff Current
(V
CE
=30Vdc, V
EB(OFF)
=3.0Vdc)
Emitter-Base Cutoff Current
(V
CE
=30Vdc, V
EB(OFF)
=3.0Vdc)
DIM
A
B
C
D
E
F
G
H
J
K
NOTE
ON CHARACTERISTICS
(2)
DC Current Gain
---
(I
C
=100uAdc, V
CE
=1.0Vdc)
60
---
80
(I
C
=1.0mAdc, V
CE
=1.0Vdc)
300
100
(I
C
=10mAdc, V
CE
=1.0Vdc)
---
60
(I
C
=50mAdc, V
CE
=1.0Vdc)
---
30
(I
C
=500mAdc, V
CE
=1.0Vdc)
V
CE(sat)
Collector-Emitter Saturation Voltage
(I
C
=10mAdc, I
B
=1.0mAdc)
---
0.20
(I
C
=50mAdc, I
B
=5.0mAdc)
---
0.30
V
BE(sat)
Base-Emitter Saturation Voltage
(I
C
=10mAdc, I
B
=1.0mAdc)
0.65
0.85
(I
C
=50mAdc, I
B
=5.0mAdc)
---
0.95
Note: 1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width<300us, duty cycle<2%
h
FE
Suggested Solder
Pad Layout
0.70
---
0.90
1.90
Vdc
Vdc
0.65
0.65
www.mccsemi.com
Revision: 4
1 of 3
2008/01/01

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