Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFF250M
SFF250Z
30 AMP / 200 Volts
0.060
Ω
typical
N-Channel POWER MOSFET
Features:
Rugged Construction with Polysilicon Gate Cell
Low R
DS(ON)
and High Transconductance
Excellent High Temperature Stability
Very Fast Switching Speed
Fast Recovery and Superior dV/dt Performance
Increased Reverse Energy Capability
Low Input and Transfer Capacitance for Easy Paralleling
Ceramic Seals Available for Improved Hermeticity
Hermetically Sealed Surface Mount Power Package
TX, TXV, Space Level Screening Available
Replacement for IRFM250 Types
DESIGNER’S DATA SHEET
Part Number / Ordering Information
SFF250
__ __ __
│
│
│
│
│
│
│
│
│
└
1/
│ └
Screening
2/
__
= Not Screen
│
TX = TX Level
│
TXV = TXV Level
│
S = S Level
│
└
Lead Option
3/
__
= Straight Leads
DB = Down Bend
UB = Up Bend
Package
3/
M = TO-254
Z = TO-254Z
•
•
•
•
•
•
•
•
•
•
•
Maximum Ratings
Drain – Source Voltage
Gate – Source Voltage
Continuous Collector Current
Operating & Storage Temperature
Maximum Thermal Resistance
Junction to Case
Total Device Dissipation
TO-254 (M)
Symbol
V
DS
V
GS
I
D
Top & Tstg
R
θJC
T
C
= 25ºC
T
C
= 55ºC
TO-254Z (Z)
Value
200
±20
30
-55 to +150
1
125
95
Units
Volts
Volts
Amps
ºC
ºC/W
W
P
D
For Pin Out Configuration and Optional Lead Bend, See Page 3.
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00049E
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFF250M
SFF250Z
Electrical Characteristics @ T
J
= 25ºC
(Unless Otherwise Specified)
Drain to Source Breakdown Voltage
(VGS= 0 V, ID= 250
μ
A
Drain to Source On State Resistance
(VGS= 10 V, ID= 18 A
Gate Threshold Voltage
(VDS= VGS, ID= 250μA
Forward Transconductance
(VDS≥ IN(on) X RDS(on) Max, ID= 18 A
Zero Gate Voltage Drain Current
(VDS= 200 V, VGS= 0 V)
(VDS= 200 V, VGS= 0 V, TA= 125ºC)
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn on Delay Time
Fall Time
Diode Forward Voltage
(IS= 30 A, VGS= 0 V, TJ= 25ºC)
Diode Reverse Recovery Time
Reverse Recovery Charge
Input Capacitance
Input Capacitance
Reverse Transfer Capacitance
At rated VGS
VGS=10 V
VDS= 100 V
ID= 30 A
VDD= 100 V
ID= 15 A
RG= 6.2Ω
Symbol
BV
DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
Min
200
––
2
10
––
––
––
––
––
––
––
––
––
––
––
––
––
––
––
––
––
––
Typ
––
0.06
3
17
––
––
––
––
70
18
35
29
35
75
35
1.1
150
2.0
4200
650
120
Max
––
0.085
5
––
25
250
+100
-100
120
25
65
30
180
100
120
1.5
630
8
––
––
––
Units
V
Ω
V
mho
μA
I
GSS
Q
g
Q
gs
Q
gd
td
(on)
tr
td
(off)
tf
V
SD
nA
nC
nsec
V
nsec
μC
pF
T
J
= 25ºC
IF= 10 A
di/dt= 100 A/μsec
VGS= 0 Volts
VDS= 25 Volts
f= 1 MHz
t
rr
Q
RR
C
iss
C
oss
C
rss
For thermal derating curves and other characteristics please contact SSDI Marketing Department.
Available Part Numbers:
SFF250M; SFF250MDB; SFF250MUB;
SFF250Z; SFF250ZDB; SFF250ZUB;
PIN ASSIGNMENT (Standard)
Package
TO-254 (M)
TO-254Z (Z)
Drain
Pin 1
Pin 1
Source
Pin 2
Pin 2
Gate
Pin 3
Pin 3
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00049E
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFF250M
SFF250Z
Case Outline: TO-254 (M)
.150
Ø.139
.685
.665
.750
.500
PIN 3
.545
.535
2x .155
.145
PIN 2
PIN 1
3x Ø.045
.035
.545
.535
.270
.240
.155
.140
.050
.040
.800
.790
SUFFIX: MDB
SUFFIX: MUB
Case Outline: TO-254Z (Z)
PIN 3
PIN 2
PIN 1
SUFFIX: ZDB
SUFFIX: ZUB
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00049E
DOC
京公网安备 11010802033920号
EEWORLD
