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UF5402-E

Description
ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER Voltage: 50 to 1000V Current: 3.0A
CategoryDiscrete semiconductor    diode   
File Size212KB,2 Pages
ManufacturerGulf Semiconductor
Websitehttp://www.gulfsemi.com/
Download Datasheet Parametric Compare View All

UF5402-E Overview

ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER Voltage: 50 to 1000V Current: 3.0A

UF5402-E Parametric

Parameter NameAttribute value
MakerGulf Semiconductor
package instructionO-PALF-W2
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOW POWER LOSS
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JEDEC-95 codeDO-201AD
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current150 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage200 V
Maximum reverse current10 µA
Maximum reverse recovery time0.05 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
UF5400-E thru UF5408-E
ULTRAFAST EFFICIENT
GLASS PASSIVATED RECTIFIER
Voltage: 50 to 1000V
Current: 3.0A
FEATURE
Low power loss
High surge capability
Ultra-fast recovery time for high efficiency
High temperature soldering guaranteed
250℃/10sec/0.375″lead length at 5 lbs tension
Halogen Free
DO-201AD
-
MECHANICAL DATA
Terminal:Plated axial leads solderable per
MIL-STD 202E, method 208C
Case:Molded with UL-94 Class V-0 recognized Halogen
Free Epoxy
Polarity:color band denotes cathode
Mounting position:any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25° unless otherwise stated,
C,
for capacitive load, derate current by 20%)
Symbol
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Maximum Average Forward Rectified
Current 3/8" lead length at Ta =55°C
Peak Forward Surge Current 8.3ms single
Half sine-wave superimposed on rated load
Maximum Instantaneous Forward Voltage at
Rated forward current
Maximum DC Reverse Current
Ta =25°
C
At rated DC blocking voltage
Ta =125°
C
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance
Typical Thermal Resistance
(Note 2)
(Note 3)
Vrrm
Vrms
Vdc
If(av)
Ifsm
Vf
Ir
Trr
Cj
Rth(ja)
Rth(jl)
Tstg, Tj
50
45.0
20.0
8.5
-55 to +150
1.0
10.0
100.0
75
36.0
UF5
400-
E
50
35
50
UF5
401-
E
100
70
100
UF5
402-
E
200
140
200
UF5
403-
E
300
210
300
UF5
404-
E
400
280
400
3.0
150.0
1.7
UF5
405-
E
500
350
500
UF5
406-
E
600
420
600
UF5
407-
E
800
560
800
UF5
408-
E
1000
700
1000
units
V
V
V
A
A
V
µA
nS
pF
℃/W
°
C
Storage and Operating Junction Temperature
Note:
1. Reverse Recovery Condition If
=0.5A,
Ir =1.0A, Irr =0.25A
2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
3. Thermal Resistance from Junction to Ambient and Junction to Lead with 3/8″lead length, both leads attached to heatsink
Rev.A1
www.gulfsemi.com

UF5402-E Related Products

UF5402-E UF5400-E UF5401-E UF5404-E UF5405-E UF5403-E UF5406-E UF5407-E UF5408-E
Description ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER Voltage: 50 to 1000V Current: 3.0A ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER Voltage: 50 to 1000V Current: 3.0A ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER Voltage: 50 to 1000V Current: 3.0A ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER Voltage: 50 to 1000V Current: 3.0A ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER Voltage: 50 to 1000V Current: 3.0A ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER Voltage: 50 to 1000V Current: 3.0A ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER Voltage: 50 to 1000V Current: 3.0A ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER Voltage: 50 to 1000V Current: 3.0A ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER Voltage: 50 to 1000V Current: 3.0A
Maker Gulf Semiconductor Gulf Semiconductor Gulf Semiconductor Gulf Semiconductor Gulf Semiconductor Gulf Semiconductor Gulf Semiconductor Gulf Semiconductor Gulf Semiconductor
package instruction O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Reach Compliance Code unknow unknown unknow unknown unknow unknow unknown unknow unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Other features LOW POWER LOSS LOW POWER LOSS LOW POWER LOSS LOW POWER LOSS LOW POWER LOSS LOW POWER LOSS LOW POWER LOSS LOW POWER LOSS LOW POWER LOSS
application EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1 V 1 V 1 V 1.7 V 1 V 1.7 V 1.7 V 1.7 V
JEDEC-95 code DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Maximum non-repetitive peak forward current 150 A 150 A 150 A 150 A 150 A 150 A 150 A 150 A 150 A
Number of components 1 1 1 1 1 1 1 1 1
Phase 1 1 1 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
Maximum output current 3 A 3 A 3 A 3 A 3 A 3 A 3 A 3 A 3 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Maximum repetitive peak reverse voltage 200 V 50 V 100 V 400 V 500 V 300 V 600 V 800 V 1000 V
Maximum reverse current 10 µA 10 µA 10 µA 10 µA 10 µA 10 µA 10 µA 10 µA 10 µA
Maximum reverse recovery time 0.05 µs 0.05 µs 0.05 µs 0.05 µs 0.075 µs 0.05 µs 0.075 µs 0.075 µs 0.075 µs
surface mount NO NO NO NO NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL

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