EDO DRAM, 16MX4, 50ns, CMOS, PDSO32,
Parameter Name | Attribute value |
Maker | LG Semicon Co., Ltd. |
package instruction | , |
Reach Compliance Code | unknown |
access mode | FAST PAGE WITH EDO |
Maximum access time | 50 ns |
Other features | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH; BATTERY BACKUP OPERATION |
JESD-30 code | R-PDSO-G32 |
memory density | 67108864 bit |
Memory IC Type | EDO DRAM |
memory width | 4 |
Number of functions | 1 |
Number of ports | 1 |
Number of terminals | 32 |
word count | 16777216 words |
character code | 16000000 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 70 °C |
Minimum operating temperature | |
organize | 16MX4 |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Certification status | Not Qualified |
self refresh | YES |
Maximum supply voltage (Vsup) | 3.6 V |
Minimum supply voltage (Vsup) | 3 V |
Nominal supply voltage (Vsup) | 3.3 V |
surface mount | YES |
technology | CMOS |
Temperature level | COMMERCIAL |
Terminal form | GULL WING |
Terminal location | DUAL |
GM71V65403CLT-5 | GM71VS65403CJ-6 | GM71V65403CLT-6 | GM71V65403CLJ-5 | GM71VS65403CT-5 | GM71VS65403CT-6 | GM71VS65403CJ-5 | GM71V65403CLJ-6 | |
---|---|---|---|---|---|---|---|---|
Description | EDO DRAM, 16MX4, 50ns, CMOS, PDSO32, | EDO DRAM, 16MX4, 60ns, CMOS, PDSO32, | EDO DRAM, 16MX4, 60ns, CMOS, PDSO32, | EDO DRAM, 16MX4, 50ns, CMOS, PDSO32, | EDO DRAM, 16MX4, 50ns, CMOS, PDSO32, | EDO DRAM, 16MX4, 60ns, CMOS, PDSO32, | EDO DRAM, 16MX4, 50ns, CMOS, PDSO32, | EDO DRAM, 16MX4, 60ns, CMOS, PDSO32, |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
access mode | FAST PAGE WITH EDO | FAST PAGE WITH EDO | FAST PAGE WITH EDO | FAST PAGE WITH EDO | FAST PAGE WITH EDO | FAST PAGE WITH EDO | FAST PAGE WITH EDO | FAST PAGE WITH EDO |
Maximum access time | 50 ns | 60 ns | 60 ns | 50 ns | 50 ns | 60 ns | 50 ns | 60 ns |
Other features | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH; BATTERY BACKUP OPERATION | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH; BATTERY BACKUP OPERATION | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH; BATTERY BACKUP OPERATION | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH; BATTERY BACKUP OPERATION |
JESD-30 code | R-PDSO-G32 | R-PDSO-J32 | R-PDSO-G32 | R-PDSO-J32 | R-PDSO-G32 | R-PDSO-G32 | R-PDSO-J32 | R-PDSO-J32 |
memory density | 67108864 bit | 67108864 bit | 67108864 bit | 67108864 bit | 67108864 bit | 67108864 bit | 67108864 bit | 67108864 bit |
Memory IC Type | EDO DRAM | EDO DRAM | EDO DRAM | EDO DRAM | EDO DRAM | EDO DRAM | EDO DRAM | EDO DRAM |
memory width | 4 | 4 | 4 | 4 | 4 | 4 | 4 | 4 |
Number of functions | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
Number of ports | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 32 | 32 | 32 | 32 | 32 | 32 | 32 | 32 |
word count | 16777216 words | 16777216 words | 16777216 words | 16777216 words | 16777216 words | 16777216 words | 16777216 words | 16777216 words |
character code | 16000000 | 16000000 | 16000000 | 16000000 | 16000000 | 16000000 | 16000000 | 16000000 |
Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
Maximum operating temperature | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
organize | 16MX4 | 16MX4 | 16MX4 | 16MX4 | 16MX4 | 16MX4 | 16MX4 | 16MX4 |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
Maximum supply voltage (Vsup) | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V |
Minimum supply voltage (Vsup) | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V |
Nominal supply voltage (Vsup) | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
surface mount | YES | YES | YES | YES | YES | YES | YES | YES |
technology | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
Temperature level | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
Terminal form | GULL WING | J BEND | GULL WING | J BEND | GULL WING | GULL WING | J BEND | J BEND |
Terminal location | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
Maker | LG Semicon Co., Ltd. | - | - | LG Semicon Co., Ltd. | LG Semicon Co., Ltd. | LG Semicon Co., Ltd. | LG Semicon Co., Ltd. | LG Semicon Co., Ltd. |