KSA709RTA datasheet, PDF - EEWORLD Datasheet

KSA709RTA: DescriptionSmall Signal Bipolar Transistor, 0.7A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-92; CategoryDiscrete semiconductor The transistor; File Size70KB，5 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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KSA709RTA Overview

Small Signal Bipolar Transistor, 0.7A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-92

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Fairchild
package instruction	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.7 A
Collector-emitter maximum voltage	150 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.8 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	50 MHz

	KSA709RTA	KSA709RBU
Description	Small Signal Bipolar Transistor, 0.7A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-92	Small Signal Bipolar Transistor, 0.7A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Is it Rohs certified?	incompatible	incompatible
Maker	Fairchild	Fairchild
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Maximum collector current (IC)	0.7 A	0.7 A
Collector-emitter maximum voltage	150 V	150 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	40	40
JEDEC-95 code	TO-92	TO-92
JESD-30 code	O-PBCY-T3	O-PBCY-T3
JESD-609 code	e0	e0
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	PNP	PNP
Maximum power dissipation(Abs)	0.8 W	0.8 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	50 MHz	50 MHz

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