RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-236,
Parameter Name | Attribute value |
Maker | TEMIC |
Reach Compliance Code | unknown |
Other features | LOW NOISE |
Configuration | SINGLE |
FET technology | JUNCTION |
highest frequency band | ULTRA HIGH FREQUENCY BAND |
JEDEC-95 code | TO-236 |
JESD-30 code | R-PDSO-G3 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | DEPLETION MODE |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Polarity/channel type | N-CHANNEL |
Certification status | Not Qualified |
surface mount | YES |
Terminal form | GULL WING |
Terminal location | DUAL |
transistor applications | SWITCHING |
Transistor component materials | SILICON |